4
ATF-34143 Typical Performance Curves
35
OIP3
20
ASSOCIATED GAIN (dB)
1
30
OIP3, P
1dB
(dBm)
25
20
15
10
5
0
0
20
40
60
80
100 120 140
I
DSQ
(mA)
P
1dB
3V
4V
15
NOISE FIGURE (dB)
0.8
0.6
10
0.4
5
3V
4V
0.2
3V
4V
0
0
20
40
60
80
100
120
CURRENT (mA)
0
0
20
40
60
80
100
120
CURRENT (mA)
Figure 6. OIP3 and P
1dB
vs. I
DS
and
V
DS
Tuned for NF @ 4 V, 60 mA at
2 GHz.
[1,2]
35
OIP3
Figure 7. Associated Gain vs. Current
(I
d
) and Voltage (V
D
) at 2 GHz.
[1,2]
Figure 8. Noise Figure vs. Current
(I
d
) and Voltage (V
DS
) at 2 GHz.
[1,2]
25
ASSOCIATED GAIN (dB)
0.7
0.6
NOISE FIGURE (dB)
3V
4V
30
OIP3, P
1dB
(dBm)
20
25
20
15
P
1dB
0.5
0.4
0.3
0.2
0.1
0
3V
4V
15
10
10
5
0
0
20
40
60
I
DSQ
(mA)
80
100
120
3V
4V
5
0
0
20
40
60
80
100
120
CURRENT (mA)
0
20
40
60
80
100
120
CURRENT (mA)
Figure 9. OIP3 and P
1dB
vs. I
DS
and
V
DS
Tuned for NF @ 4 V, 60 mA at
900 MHz.
[1,2]
1.2
1.0
Figure 10. Associated Gain vs. Current
(I
d
) and Voltage (V
D
) at 900 MHz.
[1,2]
Figure 11. Noise Figure vs. Current
(I
d
) and Voltage (V
DS
) at 900 MHz.
[1,2]
25
20
Fmin (dB)
0.8
0.6
0.4
0.2
0
0
2.0
4.0
6.0
FREQUENCY (GHz)
60 mA
40 mA
20 mA
G
a
(dB)
15
10
60 mA
40 mA
20 mA
5
0
1.0
2.0
3.0
4.0
5.0
6.0
FREQUENCY (GHz)
Figure 12. Fmin vs. Frequency and
Current at 4 V.
Figure 13. Associated Gain vs.
Frequency and Current at 4 V.
Notes:
1. Measurements made on a fixed toned production test board that was tuned for optimal gain match with reasonable noise figure at 4 V,
60 mA bias. This circuit represents a trade-off between optimal noise match, maximum gain match, and a realizable match based on
production test board requirements. Circuit losses have been de-embedded from actual measurements.
2. P
1dB
measurements are performed with passive biasing. Quicescent drain current, I
DSQ
, is set with zero RF drive applied. As P
1dB
is
approached, the drain current may increase or decrease depending on frequency and dc bias point. At lower values of I
DSQ
the device
is running closer to class B as power output approaches P
1dB
. This results in higher PAE (power added efficiency) when compared to
a device that is driven by a constant current source as is typically done with active biasing. As an example, at a V
DS
= 4 V and
I
DSQ
= 10 mA, I
d
increases to 62 mA as a P
1dB
of +19 dBm is approached.
HP [ AGILENT(HEWLETT-PACKARD) ]
