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ATF-34143-TR2 参数 Datasheet PDF下载

ATF-34143-TR2图片预览
型号: ATF-34143-TR2
PDF下载: 下载PDF文件 查看货源
内容描述: 低噪声赝HEMT的表面贴装塑料封装 [Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package]
分类和应用: 晶体晶体管光电二极管放大器
文件页数/大小: 15 页 / 120 K
品牌: HP [ HEWLETT-PACKARD ]
 浏览型号ATF-34143-TR2的Datasheet PDF文件第6页浏览型号ATF-34143-TR2的Datasheet PDF文件第7页浏览型号ATF-34143-TR2的Datasheet PDF文件第8页浏览型号ATF-34143-TR2的Datasheet PDF文件第9页浏览型号ATF-34143-TR2的Datasheet PDF文件第11页浏览型号ATF-34143-TR2的Datasheet PDF文件第12页浏览型号ATF-34143-TR2的Datasheet PDF文件第13页浏览型号ATF-34143-TR2的Datasheet PDF文件第14页  
10  
ATF-34143 Typical Scattering Parameters, VDS = 4 V, IDS = 60 mA  
Freq.  
GHz  
S11  
S21  
Mag.  
S12  
Mag.  
S22  
MSG/MAG  
dB  
Mag.  
Ang.  
dB  
Ang.  
dB  
Ang.  
Mag.  
Ang.  
0.5  
0.8  
1.0  
1.5  
1.8  
2.0  
2.5  
3.0  
4.0  
5.0  
6.0  
7.0  
8.0  
0.95  
0.89  
0.85  
0.78  
0.75  
0.73  
0.69  
0.67  
0.64  
0.63  
0.64  
0.66  
0.69  
0.73  
0.76  
0.78  
0.81  
0.84  
0.86  
0.87  
0.86  
0.86  
0.89  
-41  
-65  
-83  
-111  
-122  
-133  
-151  
-168  
161  
134  
111  
86  
65  
46  
28  
9
-11  
-30  
-44  
-56  
-72  
-88  
21.91  
21.33  
20.46  
18.74  
17.92  
17.16  
15.78  
14.56  
12.53  
10.88  
9.49  
8.15  
6.92  
5.72  
4.73  
3.70  
2.57  
1.20  
12.454  
11.654  
10.549  
8.646  
7.873  
7.207  
6.149  
5.345  
4.232  
3.501  
2.983  
2.557  
2.217  
1.932  
1.723  
1.531  
1.344  
1.148  
0.986  
0.870  
0.775  
0.680  
0.575  
150 -31.06  
134 -28.18  
123 -26.56  
103 -24.44  
95 -23.74  
87 -23.22  
73 -22.38  
60 -21.62  
37 -20.54  
16 -19.58  
-5 -18.79  
-26 -18.27  
-46 -17.79  
-65 -17.46  
-84 -16.95  
-104 -16.71  
-124 -16.71  
-143 -17.02  
-159 -17.46  
-175 -17.59  
168 -17.59  
151 -17.65  
135 -18.42  
0.028  
0.039  
0.047  
0.060  
0.065  
0.069  
0.076  
0.083  
0.094  
0.105  
0.115  
0.122  
0.129  
0.134  
0.142  
0.146  
68  
57  
49  
38  
33  
29  
22  
15  
3
-10  
-24  
-38  
-51  
-65  
-79  
-94  
0.29  
0.24  
0.23  
0.21  
0.21  
0.20  
0.19  
0.19  
0.18  
0.19  
0.21  
0.24  
0.28  
0.33  
0.38  
0.42  
0.47  
0.52  
0.58  
0.62  
0.65  
0.68  
0.71  
-41  
-67  
-84  
-114  
-125  
-136  
-155  
-171  
162  
135  
109  
84  
62  
42  
25  
7
-12  
-29  
-43  
-58  
-71  
-86  
-104  
26.48  
24.75  
23.51  
21.59  
20.83  
20.19  
19.08  
18.09  
16.53  
15.23  
12.89  
11.22  
10.21  
9.36  
8.94  
8.23  
7.56  
6.94  
6.37  
5.78  
4.60  
9.0  
10.0  
11.0  
12.0  
13.0  
14.0  
15.0  
16.0  
17.0  
18.0  
0.146 -111  
0.141 -126  
0.134 -139  
0.132 -150  
0.132 -163  
0.131 -178  
-0.12  
-1.21  
-2.21  
-3.35  
3.79  
3.33  
-101.99 -4.81  
0.120  
169  
ATF-34143 Typical Noise Parameters  
VDS = 4 V, IDS = 60 mA  
30  
25  
20  
15  
10  
5
Freq.  
GHz  
Fmin  
dB  
Γopt  
Rn/50  
-
Ga  
dB  
Mag.  
Ang.  
MSG  
0.5  
0.9  
1.0  
1.5  
1.8  
2.0  
2.5  
3.0  
4.0  
5.0  
6.0  
7.0  
8.0  
9.0  
10.0  
0.11  
0.14  
0.15  
0.20  
0.23  
0.26  
0.33  
0.39  
0.53  
0.67  
0.81  
0.96  
1.10  
1.25  
1.39  
0.84  
0.78  
0.77  
0.69  
0.66  
0.62  
0.55  
0.50  
0.43  
0.39  
0.39  
0.42  
0.47  
0.54  
0.62  
15  
30  
34  
53  
62  
0.14  
0.12  
0.12  
0.10  
0.10  
0.09  
0.07  
0.05  
0.03  
0.04  
0.07  
0.14  
0.26  
0.41  
0.60  
24.5  
20.7  
20.2  
18.5  
17.7  
17.2  
16.3  
15.4  
13.7  
12.3  
11.1  
10.0  
9.2  
MAG  
S
21  
0
72  
91  
-5  
111  
149  
-173  
-137  
-104  
-76  
-53  
-37  
-10  
2
8
0
4
6
10 12 14 16 18  
FREQUENCY (GHz)  
Figure 26. MSG/MAG and |S21|2 vs.  
Frequency at 4 V, 60 mA.  
8.6  
8.2  
Notes:  
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values  
are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these  
measurements a true Fmin is calculated. Refer to the noise parameter application section for more information.  
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the  
end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated  
through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the  
carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of  
that point.