12
ATF-34143 SC-70 4 Lead, High Frequency Nonlinear Model
Optimized for 0.1– 6.0 GHz
R
EQUATION La=0.1 nH
EQUATION Lb=0.1 nH
EQUATION Lc=0.8 nH
EQUATION Ld=0.6 nH
EQUATION Rb=0.1 OH
EQUATION Ca=0.15 pF
EQUATION Cb=0.15 pF
R=0.1 OH
LOSSYL
L=Lb
R=Rb
L
LOSSYL
L
LOSSYL
L=Lb
SOURCE
GATE_IN
L=Lb
R=Rb
L=La .5
*
L=Lc
R=Rb
D
S
C=Cb
C
C=Ca
C
G
L
L
LOSSYL
LOSSYL
DRAIN_OUT
SOURCE
L=Lb
R=Rb
L=Lb
R=Rb
L=Ld
L=La
This model can be used as a
the measured data in this data
sheet. For future improvements
Agilent reserves the right to
change these models without
prior notice.
design tool. It has been tested on
MDS for various specifications.
However, for more precise and
accurate design, please refer to
ATF-34143 Die Model
STATZ MESFET MODEL
*
*
MODEL = FET
IDS model
NFET=yes
PFET=
IDSMOD=3
VTO=–0.95
BETA= Beta
LAMBDA=0.09
ALPHA=4.0
B=0.8
Gate model
DELTA=.2
GSCAP=3
CGS=cgs pF
GDCAP=3
GCD=Cgd pF
Parasitics
RG=1
RD=Rd
RS=Rs
LG=Lg nH
LD=Ld nH
LS=Ls nH
CDS=Cds pF
CRF=.1
Breakdown
GSFWD=1
GSREV=0
GDFWD=1
GDREV=0
VJR=1
IS=1 nA
IR=1 nA
IMAX=.1
XTI=
Noise
FNC=01e+6
R=.17
P=.65
C=.2
TNOM=27
IDSTC=
RC=Rc
N=
VBI=.7
EG=
Model scal factors (W=FET width in microns)
EQUATION Cds=0.01 W/200
EQUATION Beta=0.06 W/200
*
EQUATION Rd=200/W
D
*
NFETMESFET
EQUATION Rs=.5 200/W
*
EQUATION Cgs=0.2 W/200
*
G
MODEL=FET
EQUATION Cgd=0.04 W/200
*
EQUATION Lg=0.03 200/W
*
S
S
EQUATION Ld=0.03 200/W
*
EQUATION Ls=0.01 200/W
*
W=800 µm
EQUATION Rc=500 200/W
*
HP [ HEWLETT-PACKARD ]
