HMC1040LP3CE
v00.0112
GaAs pHEMT MMIC LOW NOISE
AMPLIFIER, 24 - 43.5 GHz
Current vs. Input Power @ 33 GHz
80
78
76
Idd (mA)
74
72
70
68
66
-15 -14 -13 -12 -11 -10 -9
Idd
Absolute Maximum Ratings
Drain Bias Voltage
rf input power
Channel Temperature
Continuous pdiss (T = 85 °C)
(derate 5.46 mW/°C above 85 °C)
Thermal resistance
(Channel to ground paddle)
storage Temperature
operating Temperature
esD sensitivity (HBm)
+4V
175 °C
0.49 w
183 °C/w
-65 to +150 °C
-40 to +85 °C
Class 0, 100 V
-8
-7
-6
-5
-4
-3
-2
INPUT POWER (dBm)
Outline Drawing
eleCTrosTATiC seNsiTiVe DeViCe
oBserVe HANDliNG preCAUTioNs
Package Information
Part Number
HmC1040lp3Ce
package Body material
NoTes:
1. pACKAGe BoDY mATeriAl: low sTress iNJeCTioN molDeD
plAsTiC siliCA AND siliCoN impreGNATeD.
2. leAD AND GroUND pADDle mATeriAl: Copper AlloY.
3. leAD AND GroUND pADDle plATiNG: 100% mATTe TiN
4. DimeNsioNs Are iN iNCHes [millimeTers].
5. leAD spACiNG TolerANCe is NoN-CUmUlATiVe.
6. pAD BUrr leNGTH sHAll Be 0.15mm mAX. pAD BUrr HeiGHT sHAll
Be 0.05mm mAX.
7. pACKAGe wArp sHAll NoT eXCeeD 0.05mm
8. All GroUND leADs AND GroUND pADDle mUsT Be solDereD To
pCB rf GroUND.
9. refer To HiTTiTe AppliCATioN NoTe for sUGGesTeD pCB lAND
pATTerN.
lead finish
100% matte sn
msl rating
msl1
[1]
package marking
[2]
H1040
XXXX
roHs-compliant low stress injection molded plastic
[1] max peak reflow temperature of 260 °C
[2] 4-Digit lot number XXXX
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
Amplifiers - low Noise - smT
4
+5 dBm
HITTITE [ HITTITE MICROWAVE CORPORATION ]
