HMC1040LP3CE
v00.0112
GaAs pHEMT MMIC LOW NOISE
AMPLIFIER, 24 - 43.5 GHz
Typical Applications
This HmC1040lp3Be is ideal for:
Features
low Noise figure: 2.2 dB
High Gain: 23 dB
p1dB output power: +12 dBm
single supply: +2.5V @ 70 mA
output ip3: +22 dBm
50 ohm matched input/output
16 lead 3x3 mm smT package: 16mm²
Amplifiers - low Noise - smT
• Point-to-Point Radios
• Test Instrumentation
• SatCom Transponders & VSAT
• Industrial Sensors
• EW & ECM Subsystems
Functional Diagram
General Description
The HMC1040LP3CE is a self-biased GaAs MMIC
low Noise Amplifier housed in a leadless 3x3 mm
plastic surface mount package. The amplifier operates
between 24 and 43.5 GHz, delivering 23 dB of small
signal gain, 2.2 dB noise figure, and output IP3 of +22
dBm, while requiring only 70 mA from a +2.5 V supply.
The P1dB output power of +12 dBm enables the LNA to
function as a LO driver for many of Hittite’s balanced, I/Q
and image reject mixers. The HmC1040lp3Ce fe-
atures I/Os that are DC blocked and internally mat-
ched to 50 Ohms, and is ideal for high capacity
microwave radios and VsAT applications.
Electrical Specifications
,
T
A
= +25° C, Vdd1 = Vdd2 = Vdd3 = +2.5V, Idd = 70 mA
parameter
Frequency Range
Gain
[1]
Gain Variation over Temperature
Noise figure
[1]
input return loss
output return loss
output power for 1 dB Compression
saturated output power (psat)
output Third order intercept (ip3)
supply Current (idd)
(Vdd = 2.5V)
[1] Board loss subtracted out.
22
min.
Typ.
24 - 27.5
25
0.022
2.7
11
16
12
14
22
70
85
3.2
20
max.
min.
Typ.
27.5 - 33.5
23
0.021
2.2
12
13
12
14
22
70
85
2.7
17
max.
min.
Typ.
33.5 - 43.5
20
0.021
2.7
10
10
12
14
24
70
85
3.2
max.
Units
GHz
dB
dB /°C
dB
dB
dB
dBm
dBm
dBm
mA
1
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HITTITE [ HITTITE MICROWAVE CORPORATION ]
