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616LP3E 参数 Datasheet PDF下载

616LP3E图片预览
型号: 616LP3E
PDF下载: 下载PDF文件 查看货源
内容描述: 砷化镓PHEMT SMT低噪声放大器, 175 - 660兆赫 [GaAs SMT PHEMT LOW NOISE AMPLIFIER, 175 - 660 MHz]
分类和应用: 放大器
文件页数/大小: 10 页 / 351 K
品牌: HITTITE [ HITTITE MICROWAVE CORPORATION ]
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HMC616LP3 / 616LP3E
v00.0508
GaAs SMT PHEMT LOW NOISE
AMPLIFIER, 175 - 660 MHz
5
LOW NOISE AMPLIFIERS - SMT
Pin Descriptions
Pin Number
1, 3 - 5, 7, 9,
10, 12 - 14, 16
2
Function
N/C
RFIN
Description
No connection required. These pins may be connected to RF/
DC ground without affecting performance.
This pin is DC coupled. DC blocking capacitor required. See
application circuit.
This pin and ground paddle must
be connected to RF/DC ground.
Interface Schematic
6
GND
11
RFOUT
This pin is matched to 50 Ohms.
8
RES
This pin is used to set the DC current of the amplifier by
selection of external bias resistor. See application circuit.
15
Vdd
Power Supply Voltage. Choke inductor and bypass capacitors
are required. See application circuit.
Application Circuit
Components for Selected Frequencies
Tuned Frequency
Rbias
L1
L2
175 - 230 MHz
2.0k Ohms
82 nH
82 nH
230 - 660 MHz
3.92k Ohms
18 nH
51 nH
5 - 244
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com