HMC616LP3 / 616LP3E
v00.0508
GaAs SMT PHEMT LOW NOISE
AMPLIFIER, 175 - 660 MHz
5
LOW NOISE AMPLIFIERS - SMT
Absolute Bias Resistor
Range & Recommended Bias Resistor Values for Idd
Rbias (Ω)
Vdd (V)
Min
Max
Recommended
2.7k
3V
1K
[1]
3.92k
Open Circuit
4.7k
10k
820
2k
5V
0
Open Circuit
3.92k
10k
91
95
33
39
73
84
27
31
Idd (mA)
[1] With Vdd= 3V, Rbias < 1K Ohm is not recommeded and may result in the LNA becoming conditionally stable.
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
RF Input Power (RFIN)
(Vdd = +5 Vdc)
Channel Temperature
Continuous Pdiss (T= 85 °C)
(derate 8.93 mW/°C above 85 °C)
Thermal Resistance
(channel to ground paddle)
Storage Temperature
Operating Temperature
+6 Vdc
+10 dBm
150 °C
0.58 W
112 °C/W
-65 to +150 °C
-40 to +85 °C
Typical Supply
Current vs. Vdd (Rbias = 3.92kΩ)
Vdd (Vdc)
2.7
3.0
3.3
4.5
5.0
5.5
Idd (mA)
20
30
40
80
90
100
Note: Amplifi er will operate over full voltage range shown above.
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
5 - 242
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HITTITE [ HITTITE MICROWAVE CORPORATION ]
