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407MS8GE 参数 Datasheet PDF下载

407MS8GE图片预览
型号: 407MS8GE
PDF下载: 下载PDF文件 查看货源
内容描述: 砷化镓的InGaP HBT MMIC功率放大器, 5 - 7 GHz的 [GaAs InGaP HBT MMIC POWER AMPLIFIER, 5 - 7 GHz]
分类和应用: 放大器功率放大器
文件页数/大小: 6 页 / 217 K
品牌: HITTITE [ HITTITE MICROWAVE CORPORATION ]
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HMC407MS8G
/
407MS8GE
v03.1006
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 5 - 7 GHz
Pin Descriptions
Pin Number
Function
Description
Interface Schematic
1
Vcc1
Power supply voltage for the first amplifier stage. An external bypass capacitor
of 330 pF is required as shown in the application schematic.
11
LINEAR & POWER AMPLIFIERS - SMT
2
Vpd
Power control pin. For maximum power, this pin should be connected to 5V. A
higher voltage is not recommended. For lower die current, this voltage can be
reduced.
3, 6, 7
GND
Ground: Backside of package has exposed metal ground slug that must be
connected to ground thru a short path. Vias under the device are required.
This pin is AC coupled
and matched to 50 Ohms.
This pin is AC coupled
and matched to 50 Ohms.
4
RFIN
5
RFOUT
8
Vcc2
Power supply voltage for the output amplifier stage. An external bypass
capacitor of 330 pF is required. This capacitor should be placed no more than
20 mils form package lead.
Application Circuit
Note 1: Vcc1 and Vcc2 may be connected to a common Vcc.
Note 2: C2 should be located < 0.020” from Pin 8 (Vcc2).
11 - 32
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com