HMC407MS8G
/
407MS8GE
v03.1006
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 5 - 7 GHz
Gain, Power & Quiescent
Supply Current vs. Vpd @ 5.8 GHz
30
GAIN (dB), P1dB (dBm), Psat (dBm)
250
Absolute Maximum Ratings
Collector Bias Voltage (Vcc1, Vcc2)
Control Voltage (Vpd)
+5.5 Vdc
+5.5 Vdc
+20 dBm
150 °C
2W
32 °C/W
-65 to +150 °C
25
P1dB
Psat
Gain
Icq
200
RF Input Power (RFIN)(Vs = Vpd = +5Vdc)
Junction Temperature
20
150
Icq (mA)
Continuous Pdiss (T = 85 °C)
(derate 31 mW/°C above 85 °C)
Thermal Resistance
(junction to ground paddle)
Storage Temperature
Operating Temperature
15
100
11
LINEAR & POWER AMPLIFIERS - SMT
11 - 31
10
50
5
2.5
3
3.5
4
Vpd (Vdc)
4.5
0
5
-40 to +85 °C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
5. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO
PCB RF GROUND.
Package Information
Part Number
HMC407MS8G
HMC407MS8GE
Package Body Material
Low Stress Injection Molded Plastic
RoHS-compliant Low Stress Injection Molded Plastic
Lead Finish
Sn/Pb Solder
100% matte Sn
MSL Rating
MSL1
MSL1
[1]
Package Marking
[3]
H407
XXXX
H407
XXXX
[2]
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HITTITE [ HITTITE MICROWAVE CORPORATION ]
