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HD6473434F16 参数 Datasheet PDF下载

HD6473434F16图片预览
型号: HD6473434F16
PDF下载: 下载PDF文件 查看货源
内容描述: 12伏不能应用于S -掩模模型(单电源规格) ,因为这可能会永久损坏设备。 [12 V must not be applied to the S-mask model (single-power-supply specification), as this may permanently damage the device.]
分类和应用: 外围集成电路微控制器可编程只读存储器时钟
文件页数/大小: 752 页 / 2557 K
品牌: HITACHI [ HITACHI SEMICONDUCTOR ]
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Flash  
EPROM Memory  
Pin No.  
Expanded Modes  
Single-Chip Mode  
Mode 3  
FP-100B,  
TFP-100B Mode 1  
Writer  
Writer  
Mode  
Mode 2  
HIF Disabled HIF Enabled Mode  
97  
P84/IRQ3/TxD1 when HIF is disabled or STAC bit is 1 in STCR; NC  
IOW/IRQ3 when HIF is enabled and STAC bit is 0 in STCR  
NC  
NC  
NC  
NC  
98  
P85/IRQ4/RxD1 when HIF is disabled or STAC bit is 1 in STCR; NC  
CS2/IRQ4 when HIF is enabled and STAC bit is 0 in STCR  
99  
P86/SCK1/  
P86/SCK1/  
P86/SCK1/  
P86/SCK1/  
NC  
IRQ5/SCL  
IRQ5/SCL  
IRQ5/SCL  
IRQ5/SCL  
100  
RESO  
RESO  
RESO  
RESO  
NC  
Note: Pins marked NC should be left unconnected.  
For details on writer mode, refer to 18.2, Writer Mode, 19.6, Flash Memory Writer Mode  
(H8/3434F), 20.6, Flash Memory Writer Mode (H8/3437F) and 21.5, Flash Memory Writer  
Mode (H8/3437SF).  
In this chip, except for the S-mask model (single-power-supply specification), the same pin  
is used for STBY and FVPP. When this pin is driven low, a transition is made to hardware  
standby mode. This occurs not only in the normal operating modes (modes 1, 2, and 3), but  
also when programming flash memory with a PROM writer. When using a PROM  
programmer to program dual-power-supply flash memory, therefore, the PROM  
programmer specifications should provide for this pin to be held at the VCC level except  
when programming (FVPP = 12 V).  
*1 Differs as in mode 3, depending on whether the host interface is enabled or disabled.  
*2 XDB7 to XDB6 can only be used when the host interface is enabled.  
11  
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