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HSD32M64B8A-F10 参数 Datasheet PDF下载

HSD32M64B8A-F10图片预览
型号: HSD32M64B8A-F10
PDF下载: 下载PDF文件 查看货源
内容描述: 同步DRAM模组256Mbyte ( 32Mx64Bit ) , SO -DIMM , 4Banks , 8K参考, 3.3V [Synchronous DRAM Module 256Mbyte (32Mx64Bit), SO-DIMM, 4Banks, 8K Ref., 3.3V]
分类和应用: 存储动态存储器
文件页数/大小: 11 页 / 91 K
品牌: HANBIT [ HANBIT ELECTRONICS CO.,LTD ]
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HANBit  
HSD32M64B8A  
CKE ³ VIH(min)  
ICC2NS  
CLK £ VIL(max), tCC=¥  
Input signals are stable  
CKE £ VIL(max), tCC=10ns  
CKE&CLK £ VIL(max)  
tCC=¥  
112  
ICC3  
P
48  
48  
Active standby current in  
power-down mode  
mA  
ICC3PS  
CKE³ VIH(min),  
CS*³ VIH(min), tCC=10ns  
Input signals are changed  
one time during 20ns  
CKE³ VIH(min)  
ICC3  
N
240  
200  
Active standby current in  
non power-down mode  
(One bank active)  
mA  
ICC3NS  
CLK £VIL(max), tCC=¥  
Input signals are stable  
IO = 0 mA  
Operating current  
(Burst mode)  
Page burst  
ICC4  
1120 1120  
920  
920  
mA  
1
2
4Banks Activated  
tCCD = 2CLKs  
Refresh current  
ICC5  
ICC6  
tRC ³ tRC(min)  
1680 1680 1600 1600  
mA  
mA  
mA  
40  
16  
Self refresh current  
CKE £ 0.2V  
Notes :  
1. Measured with outputs open.  
2. Refresh period is 64ms.  
3. Unless otherwise noticed, input swing level is CMOS(VIH/VIL=VDDQ/VSSQ).  
AC OPERATING TEST CONDITIONS  
(vcc = 3.3V ± 0.3V, TA = 0 to 70°C)  
PARAMETER  
Value  
2.4/0.4  
1.4  
UNIT  
AC Input levels (Vih/Vil)  
V
Input timing measurement reference level  
Input rise and fall time  
V
tr/tf = 1/1  
1.4  
ns  
V
Output timing measurement reference level  
Output load condition  
See Fig. 2  
URL:www.hbe.co.kr  
REV.1.0(August.2002)  
HANBit Electronics Co.,Ltd.  
6