欢迎访问ic37.com |
会员登录 免费注册
发布采购

HMNR1288D-70 参数 Datasheet PDF下载

HMNR1288D-70图片预览
型号: HMNR1288D-70
PDF下载: 下载PDF文件 查看货源
内容描述: 5.0或3.3V , 1兆位( 128千位×8 ) TIMEKEEPER NVSRAM [5.0 or 3.3V, 1 Mbit (128 Kbit x 8) TIMEKEEPER NVSRAM]
分类和应用: 存储内存集成电路静态存储器
文件页数/大小: 14 页 / 315 K
品牌: HANBIT [ HANBIT ELECTRONICS CO.,LTD ]
 浏览型号HMNR1288D-70的Datasheet PDF文件第6页浏览型号HMNR1288D-70的Datasheet PDF文件第7页浏览型号HMNR1288D-70的Datasheet PDF文件第8页浏览型号HMNR1288D-70的Datasheet PDF文件第9页浏览型号HMNR1288D-70的Datasheet PDF文件第10页浏览型号HMNR1288D-70的Datasheet PDF文件第11页浏览型号HMNR1288D-70的Datasheet PDF文件第12页浏览型号HMNR1288D-70的Datasheet PDF文件第14页  
HANBit  
HMNR1288D(V)  
Battery Low Warning  
The HMNR1288D(V) automatically performs battery voltage monitoring upon power-up and at factory-programmed time  
intervals of approximately 24 hours. The Battery Low (BL) Bit, Bit D4 of Flags Register 1FFF0h, will be asserted if the  
battery voltage is found to be less than approximately 2.5V. The BL Bit will remain asserted until completion of battery  
replacement and subsequent battery low monitoring tests, either during the next power-up sequence or the next  
scheduled 24hour interval. If a battery low is generated during a power-up sequence,  
this indicates that the battery is below approximately 2.5V and may not be able to maintain  
data integrity in the SRAM. Data should be considered suspect and verified as correct. A fresh battery should be installed.  
If a battery low indication is generated during the 24-hour interval check, this indicates that the battery is near end of life.  
However, data is not compromised  
due to the fact that a nominal VCC is supplied. In order to insure data integrity during  
Power Supply Decoupling and Undershoot Protection  
Note: ICC transients, including those produced by output  
switching, can produce voltage fluctuations, resulting in spikes  
on the VCC bus. These transients can be reduced if capacitors  
are used to store energy which stabilizes the VCC bus. The  
energy stored in the bypass capacitors will be released as low  
going spikes are generated or energy will be absorbed when  
overshoots occur. A ceramic bypass capacitor value of 0.1uF  
is recommended in order to provide the needed filtering. In  
addition to transients that are caused by normal SRAM  
operation, power cycling can generate negative voltage  
spikes on VCC that drive it to values below VSS by as much as  
one volt. These negative spikes can cause data corruption in  
the SRAM while in battery backup mode. To protect from  
these voltage spikes, ST recommends connecting a schottky  
diode from VCC to VSS (cathode connected to VCC, anode to  
VSS). (Schottky diode 1N5817 is recommended for through  
hole and MBRS120T3 is recommended for surface mount).  
Figure 8. Supply Voltage Protection  
URL : www.hbe.co.kr  
Rev. 1.0 (April, 2002)  
14  
HANBit Electronics Co.,Ltd