HANBit
HMF51232J4V
3.3V
2.7kW
IN3064
or Equivalent
Device
Under
Test
CL
6.2kW
Diodes = IN3064
or Equivalent
Note : CL = 100pF including jig capacitance
u Write/Erase/Program Operations
Alternate /WE Controlled Writes
PARAMETER SYMBOLS
DESCRIPTION
-55
-90
UNIT
JEDEC
tAVAV
STANDARD
tWC
Write Cycle Time
Address Setup Time
Address Hold Time
Data Setup Time
Data Hold Time
Min
55
0
90
0
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
sec
ms
tAVWL
tWLAX
tDVWH
tWHDX
tAS
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Typ
Typ
Min
tAH
45
35
0
45
45
0
tDS
tDH
tOES
Output Enable Setup Time
Read Recover Time Before Write
/CE Setup Time
0
0
tGHWL
tELWL
tGHWL
tCS
0
0
0
0
tWHEH
tWLWH
tWHWL
tWHWH1
tWHWH2
tCH
/CE Hold Time
0
0
tWP
Write Pulse Width
35
30
9
35
30
9
tWPH
tWHWH1
tWHWH2
tVCS
Write Pulse Width High
Byte Programming Operation
Sector Erase Operation (Note1)
Vcc Setup Time
0.7
50
0.7
50
Notes
:
1. This does not include the preprogramming time
2. This timing is only for Sector Protect operations
5
URL: www.hbe.co.kr
REV.02(August,2002)
HANBit Electronics Co., Ltd.
HANBIT [ HANBIT ELECTRONICS CO.,LTD ]
