欢迎访问ic37.com |
会员登录 免费注册
发布采购

GS816036BGT-250IV 参数 Datasheet PDF下载

GS816036BGT-250IV图片预览
型号: GS816036BGT-250IV
PDF下载: 下载PDF文件 查看货源
内容描述: 1M ×18 , 512K ×32 , 512K ×36 18MB同步突发静态存储器 [1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs]
分类和应用: 存储内存集成电路静态存储器
文件页数/大小: 23 页 / 984 K
品牌: GSI [ GSI TECHNOLOGY ]
 浏览型号GS816036BGT-250IV的Datasheet PDF文件第7页浏览型号GS816036BGT-250IV的Datasheet PDF文件第8页浏览型号GS816036BGT-250IV的Datasheet PDF文件第9页浏览型号GS816036BGT-250IV的Datasheet PDF文件第10页浏览型号GS816036BGT-250IV的Datasheet PDF文件第12页浏览型号GS816036BGT-250IV的Datasheet PDF文件第13页浏览型号GS816036BGT-250IV的Datasheet PDF文件第14页浏览型号GS816036BGT-250IV的Datasheet PDF文件第15页  
Preliminary  
GS8160xxBT-xxxV  
Simplified State Diagram with G  
X
Deselect  
W
R
W
R
X
W
R
X
First Write  
First Read  
CR  
CW  
CW  
CR  
W
R
R
W
X
Burst Write  
X
Burst Read  
CR  
CW  
CW  
CR  
Notes:  
1. The diagram shows supported (tested) synchronous state transitions plus supported transitions that depend upon the use of G.  
2. Use of “Dummy Reads” (Read Cycles with G High) may be used to make the transition from Read cycles to Write cycles without passing  
through a Deselect cycle. Dummy Read cycles increment the address counter just like normal read cycles.  
3. Transitions shown in gray tone assume G has been pulsed high long enough to turn the RAM’s drivers off and for incoming data to meet  
Data Input Set Up Time.  
Rev: 1.01 5/2006  
11/23  
© 2004, GSI Technology  
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.  
 复制成功!