欢迎访问ic37.com |
会员登录 免费注册
发布采购

GS71116J-12T 参数 Datasheet PDF下载

GS71116J-12T图片预览
型号: GS71116J-12T
PDF下载: 下载PDF文件 查看货源
内容描述: [Standard SRAM, 64KX16, 12ns, CMOS, PDSO44, 0.400 INCH, SOJ-44]
分类和应用: 静态存储器光电二极管内存集成电路
文件页数/大小: 15 页 / 220 K
品牌: GSI [ GSI TECHNOLOGY ]
 浏览型号GS71116J-12T的Datasheet PDF文件第3页浏览型号GS71116J-12T的Datasheet PDF文件第4页浏览型号GS71116J-12T的Datasheet PDF文件第5页浏览型号GS71116J-12T的Datasheet PDF文件第6页浏览型号GS71116J-12T的Datasheet PDF文件第8页浏览型号GS71116J-12T的Datasheet PDF文件第9页浏览型号GS71116J-12T的Datasheet PDF文件第10页浏览型号GS71116J-12T的Datasheet PDF文件第11页  
GS71116TP/J/U
AC Characteristics
Read Cycle
Parameter
Read cycle time
Address access time
Chip enable access time (CE)
Byte enable access time (UB, LB)
Output enable to output valid (OE)
Output hold from address change
Chip enable to output in low Z (CE)
Output enable to output in low Z (OE)
Byte enable to output in low Z (UB, LB)
Chip disable to output in High Z (CE)
Output disable to output in High Z (OE)
Byte disable to output in High Z (UB, LB)
* These parameters are sampled and are not 100% tested
Symbol
t
RC
t
AA
t
AC
t
AB
t
OE
t
OH
t
LZ
*
t
OLZ
*
t
BLZ
*
t
HZ
*
t
OHZ
*
t
BHZ
*
-10
Min
10
---
---
---
---
3
3
0
0
---
---
---
-12
Max
---
10
10
4
4
---
---
---
---
5
4
3.5
-15
Max
---
12
12
5
5
---
---
---
---
6
5
3.5
Min
12
---
---
---
---
3
3
0
0
---
---
---
Min
15
---
---
---
---
3
3
0
0
---
---
---
Max
---
15
15
6
6
---
---
---
---
7
6
4
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
---
Read Cycle 1: CE = OE = V
IL
, WE = V
IH
, UB and, or LB = V
IL
t
RC
Address
t
AA
t
OH
Data Out
Previous Data
Data valid
Rev: 1.06 6/2000
7/15
© 1999, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.