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GS71116J-12T 参数 Datasheet PDF下载

GS71116J-12T图片预览
型号: GS71116J-12T
PDF下载: 下载PDF文件 查看货源
内容描述: [Standard SRAM, 64KX16, 12ns, CMOS, PDSO44, 0.400 INCH, SOJ-44]
分类和应用: 静态存储器光电二极管内存集成电路
文件页数/大小: 15 页 / 220 K
品牌: GSI [ GSI TECHNOLOGY ]
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GS71116TP/J/U
Truth Table
CE
H
OE
X
WE
X
LB
X
L
UB
X
L
H
L
L
H
L
X
H
DQ
1
to DQ
8
Not Selected
Read
Read
High Z
Write
Write
Not Write, High Z
High Z
High Z
DQ
9
to DQ
16
Not Selected
Read
High Z
Read
Write
Not Write, High Z
Write
High Z
High Z
V
DD
Current
ISB
1
, ISB
2
L
L
H
L
H
L
L
X
L
L
H
I
DD
L
L
H
X
H
X
X
H
Note: X: “H” or “L”
Absolute Maximum Ratings
Parameter
Supply Voltage
Input Voltage
Output Voltage
Allowable power dissipation
Storage temperature
Symbol
V
DD
V
IN
V
OUT
PD
T
STG
Rating
-0.5 to +4.6
-0.5 to V
DD
+0.5
(
4.6V max.)
-0.5 to V
DD
+0.5
(
4.6V max.)
0.7
-55 to 150
Unit
V
V
V
W
o
C
Note:
Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional operation shall be restricted to Recommended
Operating Conditions. Exposure to higher than recommended voltages for extended periods of time could affect device reliability.
Rev: 1.06 6/2000
3/15
© 1999, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.