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GS4288C36L-25T 参数 Datasheet PDF下载

GS4288C36L-25T图片预览
型号: GS4288C36L-25T
PDF下载: 下载PDF文件 查看货源
内容描述: [DDR DRAM, 8MX36, CMOS, PBGA144, UBGA-144]
分类和应用: 动态存储器双倍数据速率内存集成电路
文件页数/大小: 62 页 / 2384 K
品牌: GSI [ GSI TECHNOLOGY ]
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Preliminary  
GS4288C09/18/36L  
Write  
Write data transfers are launched with a Write command, as shown below. A valid address must be provided during the Write  
command.  
During Write data transfers, each beat of incoming data is registered on crossings of DK and DK until the burst transfer is  
complete. Write Latency (WL) that is always one cycle longer than the programmed Read Latency (RL), so the first valid data  
registered at the first True crossing of the DK clocks WL cycles after the Write command.  
A Write burst may be followed by a Read command (assuming tRC is met). At least one NOP command is required between Write  
and Read commands to avoid data bus contention. The Write-to-Read timing diagrams illustrate the timing requirements for a  
Write followed by a Read. Setup and hold times for incoming DQ relative to the DK edges are specified as tDS and tDH. Input  
data may be masked a High on an associated DM pin. The setup and hold times for the DM signal are tDS and tDH.W  
Write Command  
CK  
CK  
CS  
WE  
REF  
Addr  
A
BA(2:0)  
BA  
Rev: 1.02 3/2013  
20/62  
© 2011, GSI Technology  
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.  
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