data sheet
July 1997
Revision 1.0
EOB2UV6482B-60TG-S
16MByte (2M x 64) CMOS EDO DRAM Module - 3.3V
General Description
The EOB2UV6482B-60TG-S is a high performance, EDO (Extended Data Out) 16-megabyte dynamic RAM module organized
as 2M words by 64 bits, in a 144-pin, small outline dual-in-line (SO DIMM) memory module.
The module utilizes eight, Fujitsu MB81V17805B-60PFTN CMOS 2Mx8 EDO dynamic RAMs in a surface mount package on an
epoxy laminate substrate. Each device is accompanied by a decoupling capacitor for improved noise immunity.
Control lines provided are such that byte control is possible. Serial PD on the module is provided by using 128 byte serial EEPROM.
Features
• High Density: 16MByte
• Fast Access Time of 60ns (max.)
• Low Power: 3.2W (max.)
- Active (60ns)
57.6mW (max.) - Standby (LVTTL)
28.8mW (max.) - Standby (CMOS)
• LVTTL-compatible inputs and outputs
• Separate power and ground planes to improve noise immunity
• Single power supply of 3.3V±0.3V
• Height: 1.000 inch
ABSOLUTE MAXIMUM RATINGS
Item
Voltage on any pin relative to V
SS
Power Dissipation
Operating Temperature
Storage Temperate
Short Circuit Output Current
Symbol
V
T
P
T
T
opr
T
stg
I
OS
Ratings
-0.5 to +4.6
8
0 to +70
-55 to +125
50
Unit
V
W
°
C
°
C
mA
RECOMMENDED DC OPERATING CONDITIONS
(T
A
= 0 to +70
°C)
Symbol
V
CC
V
SS
V
IH
V
IL
Parameter
Supply Voltage
Ground
Input High voltage
Input Low voltage
Min
3.0
0
2.0
-0.3
Typ
3.3
0
-
-
Max
3.6
0
V
CC
+0.3
0.8
Unit
V
V
V
V
Fujitsu Microelectronics, Inc./Fujitsu Mikroelektronik GmbH
1
FUJITSU [ FUJITSU COMPONENT LIMITED. ]
