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29LV800BE 参数 Datasheet PDF下载

29LV800BE图片预览
型号: 29LV800BE
PDF下载: 下载PDF文件 查看货源
内容描述: 8M ( 1M X 512分之8的K× 16 )位 [8M (1M x 8/512 K x 16) BIT]
分类和应用:
文件页数/大小: 58 页 / 292 K
品牌: FUJITSU [ FUJITSU ]
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MBM29LV800TE/BE60/70/90  
DQ2  
Toggle Bit II  
This toggle bit II, along with DQ6, can be used to determine whether the devices are in the Embedded Erase  
Algorithm or in Erase Suspend.  
Successive reads from the erasing sector will cause DQ2 to toggle during the Embedded Erase Algorithm. If the  
devices are in the erase-suspended-read mode, successive reads from the erase-suspended sector will cause  
DQ2 to toggle. When the devices are in the erase-suspended-program mode, successive reads from the byte  
address of the non-erase suspended sector will indicate a logic “1” at the DQ2 bit.  
DQ6 is different from DQ2 in that DQ6 toggles only when the standard program or Erase, or Erase Suspend  
Program operation is in progress. The behavior of these two status bits, along with that of DQ7, is summarized  
as follows :  
For example, DQ2 and DQ6 can be used together to determine if the erase-suspend-read mode is in progress.  
(DQ2 toggles while DQ6 does not.) See also “Hardware Sequence Flags” and “DQ2 vs. DQ6” in “TIMING  
DIAGRAM”.  
Furthermore, DQ2 can also be used to determine which sector is being erased. When device is in the erase  
mode, DQ2 toggles if this bit is read from an erasing sector.  
Toggle Bit Status  
Mode  
DQ7  
DQ7  
0
DQ6  
DQ2  
1
Program  
Erase  
Toggle  
Toggle  
Toggle  
Erase-Suspend Read  
1
1
Toggle  
1 *2  
(Erase-Suspended Sector) *1  
Erase-Suspend Program  
DQ7  
Toggle *1  
*1 : Performing successive read operations from any address will cause DQ6 to toggle.  
*2 : Reading the byte address being programmed while in the erase-suspend program mode will indicate logic “1”  
at the DQ2 bit. However, successive reads from the erase-suspended sector will cause DQ2 to toggle.  
RY/BY  
Ready/Busy  
MBM29LV800TE/BE provide a RY/BY open-drain output pin as a way to indicate to the host system that Em-  
bedded Algorithms are either in progress or has been completed. If output is low, devices are busy with either  
a program or erase operation. If output is high, devices are ready to accept any read/write or erase operation.  
If MBM29LV800TE/BE are placed in an Erase Suspend mode, RY/BY output will be high.  
During programming, RY/BY pin is driven low after the rising edge of the fourth WE pulse. During an erase  
operation, RY/BY pin is driven low after the rising edge of the sixth WE pulse. RY/BY pin will indicate a busy  
condition during RESET pulse. Refer to “RY/BY Timing Diagram during Program/Erase Operation Timing  
Diagram” and “RESET, RY/BY Timing Diagram” in “TIMING DIAGRAM” for a detailed timing diagram. RY/BY  
pin is pulled high in standby mode.  
Since this is an open-drain output, RY/BY pins can be tied together in parallel with a pull-up resistor to VCC.  
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