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29LV800BE 参数 Datasheet PDF下载

29LV800BE图片预览
型号: 29LV800BE
PDF下载: 下载PDF文件 查看货源
内容描述: 8M ( 1M X 512分之8的K× 16 )位 [8M (1M x 8/512 K x 16) BIT]
分类和应用:
文件页数/大小: 58 页 / 292 K
品牌: FUJITSU [ FUJITSU ]
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MBM29LV800TE/BE60/70/90  
If hardware reset occurs during the programming operation, it is impossible to guarantee the data are being  
written.  
Programming is allowed in any sequence and across sector boundaries. Beware that a data “0” cannot be  
programmed back to a “1”. Attempting to do so may either hang up the device or result in an apparent success  
according to the data polling algorithm but a read from read/reset mode will show that the data is still “0”. Only  
erase operations can convert “0”s to “1”s.  
“Embedded ProgramTM Algorithm” in “FLOW CHART” illustrates the Embedded ProgramTM Algorithm using  
typical command strings and bus operations.  
Chip Erase  
Chip erase is a six bus cycle operation. There are two “unlock” write cycles. These are followed by writing the  
“set-up” command. Two more “unlock” write cycles are then followed by the chip erase command.  
Chip erase does not require the user to program the device prior to erase. Upon executing the Embedded Erase  
Algorithm command sequence the devices will automatically program and verify the entire memory for an all  
zero data pattern prior to electrical erase (Preprogram function) . The system is not required to provide any  
controls or timings during these operations.  
The automatic erase begins on the rising edge of the last WE pulse in the command sequence and terminates  
when the data on DQ7 is “1” (See Write Operation Status section.) at which time the device returns to read the  
mode.  
Chip Erase Time; Sector Erase Time × All sectors + Chip Program Time (Preprogramming)  
“Embedded EraseTM Algorithm” in “FLOW CHART” illustrates the Embedded EraseTM Algorithm using typical  
command strings and bus operations.  
Sector Erase  
Sector erase is a six bus cycle operation. There are two “unlock” write cycles. These are followed by writing the  
“set-up” command. Two more “unlock” write cycles are then followed by the Sector Erase command. The sector  
address (any address location within the desired sector) is latched on the falling edge of WE, while the command  
(Data = 30h) is latched on the rising edge of WE. After time-out of “tTOW” from the rising edge of the last sector  
erase command, the sector erase operation will begin.  
Multiple sectors may be erased concurrently by writing the six bus cycle operations on “MBM29LV800TE/BE  
Command Definitions” in “DEVICE BUS OPERATION”. This sequence is followed with writes of the Sector  
Erase command to addresses in other sectors desired to be concurrently erased. The time between writes must  
be less than “tTOW” otherwise that command will not be accepted and erasure will not start. It is recommended  
that processor interrupts be disabled during this time to guarantee this condition. The interrupts can be re-  
enabled after the last Sector Erase command is written. A time-out of “tTOW” from the rising edge of the last WE  
will initiate the execution of the Sector Erase command (s) . If another falling edge of the WE occurs within the  
“tTOW” time-out window the timer is reset. (Monitor DQ3 to determine if the sector erase timer window is still open,  
see section DQ3, Sector Erase Timer.) Once execution has begun resetting the devices will corrupt the data in  
the sector. In that case, restart the erase on those sectors and allow them to complete. (Refer to the Write  
Operation Status section for Sector Erase Timer operation.) Loading the sector erase buffer may be done in any  
sequence and with any number of sectors (0 to 18) .  
Sector erase does not require the user to program the devices prior to erase. The devices automatically program  
all memory locations in the sector (s) to be erased prior to electrical erase (Preprogram function) . When erasing  
a sector or sectors the remaining unselected sectors are not affected. The system is not required to provide any  
controls or timings during these operations.  
The automatic sector erase begins after the “tTOW” time out from the rising edge of the WE pulse for the last  
sector erase command pulse and terminates when the data on DQ7 is “1” (See Write Operation Status section.)  
at which time the devices return to the read mode. Data polling must be performed at an address within any of  
the sectors being erased. Multiple Sector Erase Time; [Sector Erase Time + Sector Program Time (Preprogram-  
ming) ] × Number of Sector Erase  
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