6MBI35S-120
IGBT Modules
Switching time vs. Collector current (typ.)
Vcc=600V,VGE=±15V, Rg=33Ω,Tj=25oC
Switching time vs. Collector current (typ.)
Vcc=600V,VGE=±15V, Rg=33Ω,Tj=125oC
1000
500
1000
500
toff
toff
ton
tr
ton
tr
tf
100
50
100
50
tf
0
20
40
Ic [ A ]
60
0
0
0
20
40
60
Collector current
:
Collector current : Ic [ A ]
Switching time vs. Gate resistance (typ.)
Switching loss vs. Collector current (typ.)
Vcc=600V,Ic=35A,VGE=±15V, Tj=25oC
Vcc=600V,VGE=±15V, Rg=33Ω
5000
10
8
Eon(125 oC)
1000
500
Eon(25 oC)
6
Eoff(125 oC)
Eoff(25o)C
toff
4
ton
2
tr
tf
Err(125 oC)
Err(25 oC)
100
50
0
10
50
100
Rg
500
20
40
60
Gate resistance
:
[
Ω
]
Collector current : Ic [ A ]
Reverse bias safe operating area
Switching loss vs. Gate resistance (typ.)
Vcc=600V,Ic=35A,VGE=±15V,Tj=125oC
+VGE=15V, -VGE<15V, Rg>33Ω,Tj<125oC
=
=
=
25
20
15
10
5
100
80
60
40
20
0
Eon
Eoff
Err
0
10
50
100
Rg
500
200
400
600
800
1000
1200
1400
Gate resistance
:
[
Ω
]
Collector - Emitter voltage : VCE [ V ]
FUJI [ FUJI ELECTRIC ]
