6MBI35S-120
IGBT Modules
Characteristics
Collector current vs. Collector-Emitter voltage
Collector current vs. Collector-Emitter voltage
Tj= 125 oC (typ.)
Tj= 25 oC (typ.)
80
60
40
20
0
80
60
40
20
0
15V
15V
12V
12V
VGE= 20V
VGE= 20V
10V
10V
8V
8V
0
0
0
1
2
3
:
4
5
0
5
0
1
2
3
:
4
5
Collector - Emitter voltage
VCE [ V ]
Collector - Emitter voltage
VCE [ V ]
Collector current vs. Collector-Emitter voltage
VGE=15V (typ.)
Collector-Emitter voltage vs. Gate-Emitter voltage
Tj= 25 oC (typ.)
80
60
40
20
0
10
8
Tj= 125 o
C
Tj= 25oC
6
4
Ic= 70A
Ic= 35A
2
Ic= 17.5A
0
1
2
3
4
5
10
15
20
25
Collector - Emitter voltage
:
VCE [ V ]
Gate - Emitter voltage : VGE [ V ]
Dynamic Gate charge (typ.)
Vcc=600V, Ic=35A, Tj= 25 oC
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25 oC
10000
1000
100
1000
800
600
400
200
0
25
20
15
10
5
Cies
Coes
Cres
0
5
10
15
20
25
30
35
100
200
Gate charge : Qg [ nC ]
300
400
Collector - Emitter voltage
:
VCE [ V ]
FUJI [ FUJI ELECTRIC ]
