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6MBI35S-120 参数 Datasheet PDF下载

6MBI35S-120图片预览
型号: 6MBI35S-120
PDF下载: 下载PDF文件 查看货源
内容描述: [IGBT(1200V/35A)]
分类和应用: 双极性晶体管
文件页数/大小: 4 页 / 502 K
品牌: FUJI [ FUJI ELECTRIC ]
 浏览型号6MBI35S-120的Datasheet PDF文件第2页浏览型号6MBI35S-120的Datasheet PDF文件第3页浏览型号6MBI35S-120的Datasheet PDF文件第4页  
IGBT Modules  
6MBI35S-120  
IGBT MODULE ( S series)  
1200V / 35A 6 in one-package  
Features  
· Compact package  
· P.C.board mount  
· Low VCE(sat)  
Applications  
· Inverter for motor drive  
· AC and DC servo drive amplifier  
· Uninterruptible power supply  
· Industrial machines, such as welding machines  
Maximum ratings and characteristics  
Absolute maximum ratings (Tc=25°C unless otherwise specified)  
Item  
Symbol  
VCES  
VGES  
IC  
Unit  
V
Rating  
Collector-Emitter voltage  
Gate-Emitter voltage  
Collector Continuous Tc=25°C  
Equivalent Circuit Schematic  
1200  
V
±20  
13(P)  
A
50  
current  
Tc=80°C  
35  
1(G u)  
5(G v)  
9(G w)  
1ms  
Tc=25°C IC pulse  
Tc=80°C  
A
100  
70  
2(Eu)  
6(Ev)  
10(Ew)  
-IC  
A
35  
16(U)  
15(V)  
14(W )  
1ms  
-IC pulse  
A
70  
240  
3(G x)  
4(Ex)  
7(G y)  
8(Ey)  
11(G z)  
12(Ez)  
Max. power dissipation (1 device)  
Operating temperature  
Storage temperature  
Isolation voltage  
PC  
W
°C  
°C  
V
Tj  
+150  
17(N)  
Tstg  
-40 to +125  
AC 2500 (1min.)  
3.5  
Vis  
Screw torque  
Mounting *1  
N·m  
*1 : Recommendable value : 2.5 to 3.5 N·m (M5)  
Electrical characteristics (Tj=25°C unless otherwise specified)  
Item  
Symbol  
Characteristics  
Conditions  
Unit  
Min.  
Typ.  
Max.  
1.0  
ICES  
Zero gate voltage collector current  
Gate-Emitter leakage current  
VGE=0V, VCE=1200V  
VCE=0V, VGE=±20V  
VCE=20V, IC=35mA  
mA  
µA  
V
IGES  
0.2  
VGE(th)  
VCE(sat)  
5.5  
7.2  
8.5  
Gate-Emitter threshold voltage  
Collector-Emitter saturation voltage  
2.3  
2.8  
2.65  
Tj=25°C VGE=15V, IC=35A  
Tj=125°C  
V
Cies  
Coes  
Cres  
ton  
tr  
4200  
875  
770  
0.35  
0.25  
0.1  
Input capacitance  
VGE=0V  
pF  
µs  
Output capacitance  
Reverse transfer capacitance  
Turn-on time  
VCE=10V  
f=1MHz  
1.2  
0.6  
VCC=600V  
IC=35A  
tr(i)  
toff  
tf  
VGE=±15V  
RG=33  
0.45  
0.08  
2.5  
1.0  
0.3  
3.3  
Turn-off time  
VF  
Diode forward on voltage  
Reverse recovery time  
Tj=25°C  
Tj=125°C  
IF=35A  
IF=35A, VGE=0V  
V
2.0  
trr  
0.35  
µs  
Thermal resistance characteristics  
Item  
Symbol  
Characteristics  
Conditions  
Unit  
Min.  
Typ.  
Max.  
Rth(j-c)  
Rth(j-c)  
Rth(c-f)*2  
IGBT  
FWD  
0.52  
0.90  
°C/W  
°C/W  
°C/W  
Thermal resistance  
the base to cooling fin  
0.05  
*2 : This is the value which is defined mounting on the additional cooling fin with thermal compound