Freescale Semiconductor, Inc.
EEPROM-2
EEPGM — EEPROM Program/Erase Enable Bit
This read/write bit enables the internal charge pump and applies the
programming/erasing voltage to the EEPROM array if the EELAT bit
is set and a write to a valid EEPROM location has occurred. Reset
clears the EEPGM bit.
1 = EEPROM programming/erasing power switched on
0 = EEPROM programming/erasing power switched off
NOTE: Writing logic 0s to both the EELAT and EEPGM bits with a single
instruction will clear EEPGM only to allow time for the removal of high
voltage.
7.4.8 EEPROM Non-Volatile Register and EEPROM Array Control Register
The EEPROM non-volatile register (EENVR2) and array control register
(EEACR2) are shown in Figure 7-2 and Figure 7-3.
Address: $FE18
Bit 7
6
5
4
3
2
1
Bit 0
Read:
Write:
Reset:
EERA
CON2
CON1 EEPRTCT EEBP3
EEBP2
EEBP1
EEBP0
Programmed value or 1 in the erased state
Figure 7-2. EEPROM-2 Non-Volatile Register (EENVR2)
Address: $FE1B
Bit 7
6
5
4
3
2
1
Bit 0
Read: EERA
Write:
CON2
CON1 EEPRTCT EEBP3
EEBP2
EEBP1
EEBP0
Reset:
EENVR2
= Unimplemented
Figure 7-3. EEPROM-2 Array Control Register (EEACR2)
Technical Data
MC68HC908AS60 — Rev. 1.0
EEPROM-2
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