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C5750X5R1H106M 参数 Datasheet PDF下载

C5750X5R1H106M图片预览
型号: C5750X5R1H106M
PDF下载: 下载PDF文件 查看货源
内容描述: 射频功率场效应晶体管 [RF Power Field Effect Transistor]
分类和应用: 晶体晶体管功率场效应晶体管射频
文件页数/大小: 16 页 / 808 K
品牌: FREESCALE [ FREESCALE SEMICONDUCTOR, INC ]
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Table 5. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
(continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Functional Tests
(1)
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 750 mA, P
out
= 28 W Avg., f = 920 MHz,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @
±5
MHz Offset.
Power Gain
Drain Efficiency
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
G
ps
η
D
PAR
ACPR
IRL
21.5
34.0
6.0
23.1
36.4
6.3
--35.5
--14
24.0
--32.5
--9
dB
%
dB
dBc
dB
Typical Broadband Performance
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 750 mA, P
out
= 28 W Avg.,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @
±5
MHz Offset.
Frequency
920 MHz
940 MHz
960 MHz
P
out
@ 1 dB Compression Point, CW
IMD Symmetry @ 82 W PEP, P
out
where IMD Third Order
Intermodulation
30 dBc
(Delta IMD Third Order Intermodulation between Upper and
Lower Sidebands > 2 dB)
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
Gain Flatness in 40 MHz Bandwidth @ P
out
= 28 W Avg.
Gain Variation over Temperature
(--30°C to +85°C)
Output Power Variation over Temperature
(--30°C to +85°C)
G
ps
(dB)
23.1
23.1
22.8
P1dB
IMD
sym
η
D
(%)
36.4
36.4
36.6
Output PAR
(dB)
6.3
6.2
6.1
100
20
ACPR
(dBc)
--35.5
--36.1
--35.8
IRL
(dB)
--14
--22
--17
W
MHz
Typical Performances
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 750 mA, 920--960 MHz Bandwidth
VBW
res
G
F
∆G
∆P1dB
80
0.3
0.02
0.004
MHz
dB
dB/°C
dB/°C
Typical Broadband Performance — 880 MHz
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 750 mA, P
out
= 28 W Avg.,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @
±5
MHz Offset.
Frequency
865 MHz
880 MHz
895 MHz
1. Part internally matched both on input and output.
G
ps
(dB)
22.9
23.0
22.8
η
D
(%)
35.4
35.5
35.6
Output PAR
(dB)
6.4
6.2
6.0
ACPR
(dBc)
--34.7
--35.1
--35.7
IRL
(dB)
--15
--23
--19
MRF8S9102NR3
RF Device Data
Freescale Semiconductor
3