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C5750X5R1H106M 参数 Datasheet PDF下载

C5750X5R1H106M图片预览
型号: C5750X5R1H106M
PDF下载: 下载PDF文件 查看货源
内容描述: 射频功率场效应晶体管 [RF Power Field Effect Transistor]
分类和应用: 晶体晶体管功率场效应晶体管射频
文件页数/大小: 16 页 / 808 K
品牌: FREESCALE [ FREESCALE SEMICONDUCTOR, INC ]
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Freescale Semiconductor
Technical Data
Document Number: MRF8S9102N
Rev. 0, 2/2011
RF Power Field Effect Transistor
N--Channel Enhancement--Mode Lateral MOSFET
Designed for CDMA base station applications with frequencies from 865 to
960 MHz. Can be used in Class AB and Class C for all typical cellular base
station modulation formats.
Typical Single--Carrier W--CDMA Performance: V
DD
= 28 Volts, I
DQ
=
750 mA, P
out
= 28 Watts Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Frequency
920 MHz
940 MHz
960 MHz
G
ps
(dB)
23.1
23.1
22.8
η
D
(%)
36.4
36.4
36.6
Output PAR
(dB)
6.3
6.2
6.1
ACPR
(dBc)
--35.5
--36.1
--35.8
MRF8S9102NR3
865-
-960 MHz, 28 W AVG., 28 V
SINGLE W-
-CDMA
LATERAL N-
-CHANNEL
RF POWER MOSFET
Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 144 Watts CW
Output Power (3 dB Input Overdrive from Rated P
out
), Designed for
Enhanced Ruggedness
Typical P
out
@ 1 dB Compression Point
100 Watts CW
880 MHz
Typical Single--Carrier W--CDMA Performance: V
DD
= 28 Volts, I
DQ
=
750 mA, P
out
= 28 Watts Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Frequency
865 MHz
880 MHz
895 MHz
G
ps
(dB)
22.9
23.0
22.8
η
D
(%)
35.4
35.5
35.6
Output PAR
(dB)
6.4
6.2
6.0
ACPR
(dBc)
--34.7
--35.1
--35.7
CASE 2021-
-03, STYLE 1
OM-
-780-
-2
PLASTIC
Features
100% PAR Tested for Guaranteed Output Power Capability
Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
Internally Matched for Ease of Use
Integrated ESD Protection
Greater Negative Gate--Source Voltage Range for Improved Class C Operation
Designed for Digital Predistortion Error Correction Systems
Optimized for Doherty Applications
225°C Capable Plastic Package
RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13 inch Reel.
©
Freescale Semiconductor, Inc., 2011. All rights reserved.
MRF8S9102NR3
1
RF Device Data
Freescale Semiconductor