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C3225X7R1H225K 参数 Datasheet PDF下载

C3225X7R1H225K图片预览
型号: C3225X7R1H225K
PDF下载: 下载PDF文件 查看货源
内容描述: RF功率LDMOS晶体管高耐用性N - 沟道增强 - 模式横向的MOSFET [RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs]
分类和应用: 晶体晶体管
文件页数/大小: 20 页 / 1270 K
品牌: FREESCALE [ FREESCALE SEMICONDUCTOR, INC ]
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TYPICAL CHARACTERISTICS
10
9
10
8
MTTF (HOURS)
10
7
10
6
10
5
10
4
90
110
130
150
170
190
210
230
250
T
J
, JUNCTION TEMPERATURE (°C)
Note:
The MTTF calculation for this graph is based on the thermal
resistance of the part using thermal grease TIM mounting.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
V
DD
= 50 Vdc
P
out
= 125 W CW
Figure 12. MTTF versus Junction Temperature - CW
-
V
DD
= 50 Vdc, I
DQ
= 1400 mA, P
out
= 125 W Avg.
f
MHz
860
Z
source
1.14 + j0.88
Z
load
2.61 + j1.84
Z
source
= Test circuit impedance as measured from
gate to gate, balanced configuration.
Z
load
= Test circuit impedance as measured
from drain to drain, balanced configuration.
Input
Matching
Network
+
Device
Under
Test
--
Output
Matching
Network
--
Z
source
Z
+
load
Figure 13. Series Equivalent Source and Load Impedance
MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5
8
RF Device Data
Freescale Semiconductor