TYPICAL CHARACTERISTICS — 470--860 MHz REFERENCE CIRCUIT
21
20
19
60
50
40
V
= 50 Vdc, I = 1400 mA
DQ
DD
Pulse Width = 100 μsec
Duty Cycle = 10%
G
ps
665 MHz
30
20
10
0
18
17
16
15
860 MHz
665 MHz
860 MHz
470 MHz
470 MHz
η
D
10
100
, OUTPUT POWER (WATTS) PULSED
1000
P
out
Figure 16. Broadband Pulsed Power Gain and Drain
Efficiency versus Output Power — 470--860 MHz
21
20
19
66
G
ps
62
58
54
50
46
42
η
D
18
17
-- 5
-- 7
16
15
14
IRL
-- 6
V
= 50 Vdc, P = 600 W Peak, I = 1400 mA
-- 11
-- 1 3
38
34
DD
out
DQ
Pulse Width = 100 μsec, Duty Cycle = 10%
13
400 450 500 550 600 650 700 750 800 850 900
f, FREQUENCY (MHz)
Figure 17. Broadband Pulsed Power Gain, Drain
Efficiency and IRL versus Frequency
35
-- 5
665 MHz
860 MHz
470 MHz
η
V
= 50 Vdc, I = 1400 mA
DQ
D
DD
DVB--T (8k OFDM), 64 QAM Data
Carrier Modulation, 5 Symbols
-- 1 0
-- 1 5
-- 2 0
30
25
20
15
G
ps
665 MHz
470 MHz
860 MHz
-- 2 5
(1)
IMD
470 MHz
665 MHz
10
5
-- 3 0
--35
860 MHz
0
40
80
120
160
200
P
, OUTPUT POWER (WATTS) AVG.
out
(1) Intermodulation distortion shoulder measurement made using
delta marker at 4.2 MHz offset from center frequency.
Figure 18. DVB--T (8k OFDM) Drain Efficiency, Power Gain and
IMD Shoulder versus Output Power — 470--860 MHz
MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5
RF Device Data
Freescale Semiconductor
12
FREESCALE [ Freescale ]
