TYPICAL CHARACTERISTICS — 520 MHz
50
45
40
35
30
25
20
15
10
5
V
= 13.6 Vdc, P = 0.6 W
in
DD
V
= 13.6 Vdc, P = 0.3 W
in
DD
V
= 12.5 Vdc, P = 0.6 W
in
DD
V
P
= 12.5 Vdc
= 0.3 W
DD
in
f = 520 MHz
5
0
0
1
2
3
4
6
V
, GATE--SOURCE VOLTAGE (VOLTS)
GS
Figure 7. Output Power versus Gate--Source Voltage
20
90
80
70
V
= 13.6 Vdc, I = 10 mA
DQ
DD
19
18
f = 520 MHz
η
D
60
50
40
17
16
15
14
13
12
G
ps
P
out
30
20
10
0
11
0.03
0.1
1
3
P , INPUT POWER (WATTS)
in
Figure 8. Power Gain, Output Power and Drain
Efficiency versus Input Power
V
= 13.6 Vdc, I = 10 mA, P = 31 W Avg.
DQ out
DD
f
Z
Z
load
source
MHz
Ω
Ω
520
0.72 + j1.77
1.54 + j0.80
Z
Z
= Test circuit impedance as measured from
gate to ground.
source
= Test circuit impedance as measured from
drain to ground.
load
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
50 Ω
50 Ω
Z
Z
load
source
Figure 9. Narrowband Series Equivalent Source and Load Impedance — 520 MHz
AFT05MS031NR1 AFT05MS031GNR1
RF Device Data
Freescale Semiconductor, Inc.
7
FREESCALE [ Freescale ]
