TYPICAL CHARACTERISTICS
7
1000
T = 25°C
A
V
= 4.25 Vdc
4 Vdc
GS
Measured with ±30 mV(rms)ac @ 1 MHz, V = 0 Vdc
GS
6
C
iss
5
4
100
10
1
C
oss
3.75 Vdc
3.5 Vdc
3
2
1
3.25 Vdc
3 Vdc
C
rss
2.75 Vdc
0
0
4
8
12
16
20
0
4
8
12
16
20
V
, DRAIN--SOURCE VOLTAGE (VOLTS)
V
, DRAIN--SOURCE VOLTAGE (VOLTS)
DS
DS
Note: Measured with both sides of the transistor tied together.
Figure 2. Capacitance versus Drain--Source Voltage
Figure 3. Drain Current versus Drain--Source Voltage
9
10
V
= 13.6 Vdc
DD
8
10
I
D
= 2.5 Amps
7
10
3.2 Amps
3.9 Amps
6
10
10
5
4
10
90
110
130
150
170
190
210
230
250
T , JUNCTION TEMPERATURE (°C)
J
Note: MTTF value represents the total cumulative operating time
under indicated test conditions.
Figure 4. MTTF versus Junction Temperature -- CW
AFT05MS031NR1 AFT05MS031GNR1
RF Device Data
Freescale Semiconductor, Inc.
4
FREESCALE [ Freescale ]
