Table 5. Electrical Characteristics (T = 25°C unless otherwise noted) (continued)
A
Characteristic
Symbol
Min
Typ
Max
Unit
Dynamic Characteristics
Reverse Transfer Capacitance
C
—
—
—
1.6
49.5
109
—
—
—
pF
pF
pF
rss
(V = 13.6 Vdc ± 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
GS
Output Capacitance
(V = 13.6 Vdc ± 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
C
oss
GS
Input Capacitance
C
iss
(V = 13.6 Vdc, V = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
DS
GS
(1)
Functional Tests
(In Freescale Narrowband Test Fixture, 50 ohm system) V = 13.6 Vdc, I = 10 mA, P = 31 W, f = 520 MHz
DD DQ out
Common--Source Amplifier Power Gain
Drain Efficiency
G
16.5
17.7
71.4
19.0
—
dB
%
ps
η
70.0
D
Load Mismatch/Ruggedness (In Freescale Test Fixture, 50 ohm system, I = 10 mA)
DQ
Frequency
(MHz)
Signal
Type
P
out
(W)
VSWR
Test Voltage, V
Result
No Device Degradation
DD
520
CW
>65:1 at all Phase Angles
47
17
(3 dB Overdrive)
1. Measurement made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull
wing (GN) parts.
AFT05MS031NR1 AFT05MS031GNR1
RF Device Data
Freescale Semiconductor, Inc.
3
FREESCALE [ Freescale ]
