Table 5. Electrical Characteristics (T = 25°C unless otherwise noted) (continued)
A
Characteristic
Symbol
Min
Typ
Max
Unit
Dynamic Characteristics
Reverse Transfer Capacitance
C
—
—
—
2.1
63
—
—
—
pF
pF
pF
rss
(V = 13.6 Vdc ± 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
GS
Output Capacitance
(V = 13.6 Vdc ± 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
C
oss
GS
Input Capacitance
C
140
iss
(V = 13.6 Vdc, V = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
DS
GS
(1)
Functional Tests
(In Freescale Narrowband Test Fixture, 50 ohm system) V = 13.6 Vdc, I = 500 mA, P = 31 W, f = 870 MHz
DD DQ out
Common--Source Amplifier Power Gain
Drain Efficiency
G
16.0
17.2
71.0
18.5
—
dB
%
ps
D
η
68.0
Load Mismatch/Ruggedness (In Freescale Test Fixture, 50 ohm system, I = 500 mA)
DQ
Frequency
(MHz)
Signal
Type
P
out
(W)
VSWR
Test Voltage, V
Result
No Device Degradation
DD
870
CW
>65:1 at all Phase Angles
54
17
(3 dB Overdrive)
1. Measurement made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull
wing (GN) parts.
AFT09MS031NR1 AFT09MS031GNR1
RF Device Data
Freescale Semiconductor, Inc.
3