Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Vdc
Vdc
Vdc
°C
Drain--Source Voltage
V
--0.5, +40
--6.0, +12
17, +0
DSS
Gate--Source Voltage
V
GS
DD
Operating Voltage
V
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
T
stg
--65 to +150
--40 to +150
--40 to +225
T
C
°C
(1,2)
T
J
°C
Total Device Dissipation @ T = 25°C
P
317
W
C
D
Derate above 25°C
1.59
W/°C
Table 2. Thermal Characteristics
(2,3)
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R
θ
0.63
°C/W
JC
Case Temperature 81°C, 31 W CW, 13.6 Vdc, I = 500 mA, 870 MHz
DQ
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
2, passes 2500 V
A, passes 100 V
IV, passes 1200 V
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD22--A113, IPC/JEDEC J--STD--020
3
260
°C
Table 5. Electrical Characteristics (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
I
I
—
—
—
—
—
—
2
1
μAdc
μAdc
nAdc
DSS
DSS
GSS
(V = 40 Vdc, V = 0 Vdc)
DS
GS
Zero Gate Voltage Drain Leakage Current
(V = 13.6 Vdc, V = 0 Vdc)
DS
GS
Gate--Source Leakage Current
I
600
(V = 5 Vdc, V = 0 Vdc)
GS
DS
On Characteristics
Gate Threshold Voltage
(V = 10 Vdc, I = 115 μAdc)
V
1.6
—
2.1
0.1
7.8
2.6
—
Vdc
Vdc
S
GS(th)
DS
D
Drain--Source On--Voltage
(V = 10 Vdc, I = 1.2 Adc)
V
DS(on)
GS
D
Forward Transconductance
(V = 10 Vdc, I = 10 Adc)
g
—
—
fs
GS
D
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
(continued)
AFT09MS031NR1 AFT09MS031GNR1
RF Device Data
Freescale Semiconductor, Inc.
2