TYPICAL CHARACTERISTICS — 870 MHz
45
40
35
V
= 13.6 Vdc, P = 0.6 W
in
DD
V
= 12.5 Vdc, P = 0.6 W
in
DD
30
25
20
15
V
= 13.6 Vdc, P = 0.3 W
in
DD
V
P
= 12.5 Vdc
= 0.3 W
DD
in
10
5
f = 870 MHz
0
0
0.5
1
1.5
2
2.5
3
4
4.5
V
, GATE--SOURCE VOLTAGE (VOLTS)
GS
Figure 7. CW Output Power versus Gate--Source Voltage
19
18.5
18
80
70
60
50
40
30
20
10
0
η
D
V
= 13.6 Vdc, I = 500 mA
DQ
DD
f = 870 MHz
17.5
17
G
ps
16.5
16
P
out
15.5
15
0.01
0.1
P , INPUT POWER (WATTS)
1
2
in
Figure 8. Power Gain, CW Output Power and
Drain Efficiency versus Input Power
V
= 13.6 Vdc, I = 500 mA, P = 31 W Avg.
DQ out
DD
f
Z
Z
load
source
MHz
Ω
Ω
870
0.28 -- j0.71
0.98 -- j0.52
Z
Z
= Test circuit impedance as measured from
gate to ground.
source
= Test circuit impedance as measured from
drain to ground.
load
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
50 Ω
50 Ω
Z
Z
load
source
Figure 9. Narrowband Series Equivalent Source and Load Impedance — 870 MHz
AFT09MS031NR1 AFT09MS031GNR1
RF Device Data
Freescale Semiconductor, Inc.
7
FREESCALE [ Freescale ]
