TYPICAL CHARACTERISTICS
1000
C
iss
24
23
G
ps
, POWER GAIN (dB)
C, CAPACITANCE (pF)
22
21
20
19
18
17
50
1
10
P
out
, OUTPUT POWER (WATTS)
100
η
D
G
ps
V
DD
= 50 Vdc, I
DQ
= 350 mA, f = 860 MHz
70
60
50
40
30
20
10
0
200
η
D,
DRAIN EFFICIENCY (%)
100
C
oss
C
rss
10
0
Measured with
±30
mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc
10
20
30
40
V
DS
, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 4. Capacitance versus Drain-
-Source Voltage
Figure 5. CW Power Gain and Drain Efficiency
versus Output Power (Single-
-Ended
Narrowband Test Circuit)
25
I
DQ
= 350 mA, f = 860 MHz
56
55
P
out
, OUTPUT POWER (dBm)
54
53
52
51
50
49
48
47
--6
--5
P3dB = 51.28 dBm (134.3 W)
P2dB = 51.06 dBm (127.6 W)
Ideal
24
23
G
ps
, POWER GAIN (dB)
22
21
20
19
18
17
16
4
P1dB = 50.7 dBm (117.5 W)
Actual
50 V
45 V
V
DD
= 40 V
10 20 30 40 50 60 70 80 90 100 110 120 130 140 150
P
out
, OUTPUT POWER (WATTS)
V
DD
= 50 Vdc, I
DQ
= 350 mA, f = 860 MHz
--4
--3
--2
--1
0
1
2
3
P
in
, INPUT POWER (dBm)
Figure 6. CW Output Power versus Input Power
(Single-
-Ended Narrowband Test Circuit)
25
24
G
ps
, POWER GAIN (dB)
23
22
21
20
19
18
85_C
G
ps
T
C
= --30_C
Figure 7. CW Power Gain versus Output Power
(Single-
-Ended Narrowband Test Circuit)
70
60
η
D,
DRAIN EFFICIENCY (%)
85_C
50
25_C
40
30
η
D
20
10
0
200
V
DD
= 50 Vdc, I
DQ
= 350 mA, f = 860 MHz
T
C
= --30_C
25_C
1
10
P
out
, OUTPUT POWER (WATTS)
100
Figure 8. CW Power Gain and Drain Efficiency
versus Output Power versus Temperature
(Single-
-Ended Narrowband Test Circuit)
MRF6VP3091NR1 MRF6VP3091NR5 MRF6VP3091NBR1 MRF6VP3091NBR5
RF Device Data
Freescale Semiconductor, Inc.
5
FREESCALE [ FREESCALE SEMICONDUCTOR, INC ]
