Freescale Semiconductor
Technical Data
Document Number: MRF6VP3091N
Rev. 1, 12/2011
RF Power LDMOS Transistors
Enhancement--Mode Lateral MOSFETs
Designed for commercial and industrial broadband applications with
frequencies from 470 to 860 MHz. Devices are suitable for use in broadcast
applications.
•
Typical Performance (Broadband Reference Circuit): V
DD
= 50 Volts,
I
DQ
= 450 mA, 64 QAM, Input Signal PAR = 9.5 dB @ 0.01% Probability
on CCDF.
P
out
(W)
18 Avg.
f
(MHz)
470
650
860
G
ps
(dB)
21.8
21.6
21.7
η
D
(%)
31.0
26.4
27.6
Output
Signal PAR
(dB)
7.9
8.4
7.1
IMD
Shoulder
(dBc)
--27.8
--37.6
--30.4
MRF6VP3091NR1
MRF6VP3091NR5
MRF6VP3091NBR1
MRF6VP3091NBR5
470-
-860 MHz, 90 W, 50 V
BROADBAND
RF POWER LDMOS TRANSISTORS
Signal Type
DVB--T (8k OFDM)
Features
•
Capable of Handling 10:1 VSWR, All Phase Angles, @ 50 Vdc, 860 MHz,
90 Watts CW Output Power
•
Characterized with Series Equivalent Large--Signal Impedance Parameters
•
Internally Input Matched for Ease of Use
•
Qualified Up to a Maximum of 50 V
DD
Operation
•
Excellent Thermal Stability
•
Device can be used Single--Ended or in a Push--Pull Configuration
•
Integrated ESD Protection
•
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
•
225°C Capable Plastic Package
•
In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13 inch Reel.
R5 Suffix = 50 Units, 56 mm Tape Width, 13 inch Reel.
CASE 1486-
-03, STYLE 1
TO-
-270 WB-
-4
PLASTIC
MRF6VP3091NR1(NR5)
CASE 1484-
-04, STYLE 1
TO-
-272 WB-
-4
PLASTIC
MRF6VP3091NBR1(NBR5)
PARTS ARE PUSH-
-PULL
Gate 1
Drain 1
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
Symbol
V
DSS
V
GS
T
stg
T
C
T
J
Value
--0.5, +115
--6.0, +10
--65 to +150
150
225
Unit
Vdc
Vdc
°C
°C
°C
Gate 2
Drain 2
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistor.
Figure 1. Pin Connections
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 76°C, 18 W CW, 50 Vdc, I
DQ
= 350 mA, 860 MHz
Case Temperature 80°C, 90 W CW, 50 Vdc, I
DQ
= 350 mA, 860 MHz
Symbol
R
θJC
Value
(2,3)
0.79
0.82
Unit
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
©
Freescale Semiconductor, Inc., 2011. All rights reserved.
MRF6VP3091NR1
MRF6VP3091NR5 MRF6VP3091NBR1 MRF6VP3091NBR5
1
RF Device Data
Freescale Semiconductor, Inc.
FREESCALE [ FREESCALE SEMICONDUCTOR, INC ]
