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908E621 参数 Datasheet PDF下载

908E621图片预览
型号: 908E621
PDF下载: 下载PDF文件 查看货源
内容描述: 综合四半桥和三重高端与嵌入式微控制器和LIN高端镜 [Integrated Quad Half-Bridge and Triple High-Side with Embedded MCU and LIN for High End Mirror]
分类和应用: 微控制器
文件页数/大小: 62 页 / 921 K
品牌: FREESCALE [ Freescale ]
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STATIC ELECTRICAL CHARACTERISTICS  
Table 3. Static Electrical Characteristics (continued)  
All characteristics are for the analog chip only. Refer to the 68HC908EY16 datasheet for characteristics of the microcontroller  
chip. Characteristics noted under conditions 9.0 V VSUP 16 V, -40°C TJ 125°C unless otherwise noted. Typical values  
noted reflect the approximate parameter mean at TA = 25°C under nominal conditions unless otherwise noted.  
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
HALF-BRIDGE OUTPUTS HB1 AND HB2  
Switch On Resistance  
RDS(ON)-HB12  
mΩ  
High-Side, TJ = 25°C, ILOAD = 1.0 A  
Low-Side, TJ = 25°C, ILOAD = 1.0 A  
750  
750  
900  
900  
Overcurrent Shutdown  
High-Side  
IHBOC12  
A
1.0  
1.0  
1.5  
1.5  
Low-Side  
Overcurrent Shutdown blanking time (18)  
Switching Frequency (18)  
tOCB  
4-8  
µs  
kHz  
V
fPWM  
25  
Free-Wheeling Diode Forward Voltage  
High-Side, TJ = 25°C, ILOAD = 1.0 A  
Low-Side, TJ = 25°C, ILOAD = 1.0 A  
VHSF  
VLSF  
0.9  
0.9  
Leakage Current  
ILeakHB  
<0.2  
10  
µA  
Low-Side Current to Voltage Ratio (19)  
CRRATIOHB12  
V/A  
17.5  
3.5  
25.0  
5.0  
32.5  
6.5  
VADOUT [V] / IHB [A], CSA = 1, (measured and trimmed IHB = 200 mA)  
VADOUT [V] / IHB [A], CSA = 0, (measured and trimmed IHB = 500 mA)  
HALF-BRIDGE OUTPUTS HB3 AND HB4  
Switch On Resistance  
RDS(ON)-HB34  
mΩ  
High-Side, TJ = 25°C, ILOAD = 1.0 A  
Low-Side, TJ = 25°C, ILOAD = 1.0 A  
275  
275  
325  
325  
Overcurrent Shutdown  
High-Side  
IHBOC34  
A
4.8  
4.8  
7.2  
7.2  
Low-Side  
Overcurrent Shutdown blanking time (18)  
Switching Frequency (18)  
tOCB  
4-8  
µs  
kHz  
V
fPWM  
25  
Free-Wheeling Diode Forward Voltage  
High-Side, TJ = 25°C, ILOAD = 1.0 A  
Low-Side, TJ = 25°C, ILOAD = 1.0 A  
VHSF  
VLSF  
0.9  
0.9  
Leakage Current  
ILeakHB  
<0.2  
10  
µA  
Low-Side Current to Voltage Ratio (19)  
CRRATIOHB34  
V/A  
3.5  
0.7  
5.0  
1.0  
6.5  
1.3  
VADOUT [V] / IHB [A], CSA = 1, (measured and trimmed IHB = 500 mA)  
VADOUT [V] / IHB [A], CSA = 0, (measured and trimmed IHB = 2 A)  
Notes  
18. This parameter is guaranteed by process monitoring but is not production tested.  
19. This parameter is guaranteed only if correct trimming was applied  
908E621  
Analog Integrated Circuit Device Data  
Freescale Semiconductor  
12