STATIC ELECTRICAL CHARACTERISTICS
Table 3. Static Electrical Characteristics (continued)
All characteristics are for the analog chip only. Refer to the 68HC908EY16 datasheet for characteristics of the microcontroller
chip. Characteristics noted under conditions 9.0 V ≤ VSUP ≤ 16 V, -40°C ≤ TJ ≤ 125°C unless otherwise noted. Typical values
noted reflect the approximate parameter mean at TA = 25°C under nominal conditions unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
HALF-BRIDGE OUTPUTS HB1 AND HB2
Switch On Resistance
RDS(ON)-HB12
mΩ
High-Side, TJ = 25°C, ILOAD = 1.0 A
Low-Side, TJ = 25°C, ILOAD = 1.0 A
–
–
750
750
900
900
Overcurrent Shutdown
High-Side
IHBOC12
A
1.0
1.0
–
–
1.5
1.5
Low-Side
Overcurrent Shutdown blanking time (18)
Switching Frequency (18)
tOCB
–
–
4-8
–
–
µs
kHz
V
fPWM
25
Free-Wheeling Diode Forward Voltage
High-Side, TJ = 25°C, ILOAD = 1.0 A
Low-Side, TJ = 25°C, ILOAD = 1.0 A
VHSF
VLSF
–
–
0.9
0.9
–
–
Leakage Current
ILeakHB
–
<0.2
10
µA
Low-Side Current to Voltage Ratio (19)
CRRATIOHB12
V/A
17.5
3.5
25.0
5.0
32.5
6.5
VADOUT [V] / IHB [A], CSA = 1, (measured and trimmed IHB = 200 mA)
VADOUT [V] / IHB [A], CSA = 0, (measured and trimmed IHB = 500 mA)
HALF-BRIDGE OUTPUTS HB3 AND HB4
Switch On Resistance
RDS(ON)-HB34
mΩ
High-Side, TJ = 25°C, ILOAD = 1.0 A
Low-Side, TJ = 25°C, ILOAD = 1.0 A
–
–
275
275
325
325
Overcurrent Shutdown
High-Side
IHBOC34
A
4.8
4.8
–
–
7.2
7.2
Low-Side
Overcurrent Shutdown blanking time (18)
Switching Frequency (18)
tOCB
–
–
4-8
–
–
µs
kHz
V
fPWM
25
Free-Wheeling Diode Forward Voltage
High-Side, TJ = 25°C, ILOAD = 1.0 A
Low-Side, TJ = 25°C, ILOAD = 1.0 A
VHSF
VLSF
–
–
0.9
0.9
–
–
Leakage Current
ILeakHB
–
<0.2
10
µA
Low-Side Current to Voltage Ratio (19)
CRRATIOHB34
V/A
3.5
0.7
5.0
1.0
6.5
1.3
VADOUT [V] / IHB [A], CSA = 1, (measured and trimmed IHB = 500 mA)
VADOUT [V] / IHB [A], CSA = 0, (measured and trimmed IHB = 2 A)
Notes
18. This parameter is guaranteed by process monitoring but is not production tested.
19. This parameter is guaranteed only if correct trimming was applied
908E621
Analog Integrated Circuit Device Data
Freescale Semiconductor
12