STATIC ELECTRICAL CHARACTERISTICS
Table 3. Static Electrical Characteristics (continued)
All characteristics are for the analog chip only. Refer to the 68HC908EY16 datasheet for characteristics of the microcontroller
chip. Characteristics noted under conditions 9.0 V ≤ VSUP ≤ 16 V, -40°C ≤ TJ ≤ 125°C unless otherwise noted. Typical values
noted reflect the approximate parameter mean at TA = 25°C under nominal conditions unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
HIGH-SIDE OUTPUT HS1
Switch On Resistance
mΩ
TJ = 25°C, ILOAD = 1.0 A
RDS(ON)-HS1
–
185
225
Overcurrent Shutdown
IHSOC1
tOCB
6.0
–
–
9.0
–
A
Overcurrent Shutdown blanking time (15)
4-8
1.2
µs
Current to Voltage Ratio (16)
CRRATIOHS1
0.84
1.56
V/A
VADOUT [V] / IHS [A], (measured and trimmed IHS = 2 A)
High-Side Switching Frequency (15)
fPWMHS
VHSF
–
–
–
25
–
kHz
V
High-Side Free-Wheeling Diode Forward Voltage
0.9
TJ = 25°C, ILOAD = 1 A
Leakage Current
ILeakHS
–
<0.2
10
µA
HIGH-SIDE OUTPUTS HS2 AND HS3(17)
Switch On Resistance
mΩ
TJ = 25°C, ILOAD = 1.0 A
RDS(ON)-HS23
–
440
500
Overcurrent Shutdown
IHSOC23
tOCB
3.6
–
–
5.6
–
A
Overcurrent Shutdown blanking time (15)
4-8
1.66
µs
Current to Voltage Ratio (16)
CRRATIOHS23
1.16
2.16
V/A
VADOUT [V] / IHS [A], (measured and trimmed IHS = 2 A)
High-Side Switching Frequency (15)
fPWMHS
VHSF
–
–
–
25
–
kHz
V
High-Side Free-Wheeling Diode Forward Voltage
0.9
TJ = 25°C, ILOAD = 1 A
Leakage Current
ILeakHS
–
<0.2
10
µA
Notes
15. This parameter is guaranteed by process monitoring but is not production tested.
16. This parameter is guaranteed only if correct trimming was applied.
17. The high-side HS3 can be only used for resistive loads.
908E621
Analog Integrated Circuit Device Data
Freescale Semiconductor
11
FREESCALE [ Freescale ]
