Freescale Semiconductor, Inc.
EEPROM Memory
EEPROM Control Registers
EEPROG — EEPROM Control
$00F3
Bit 7
BULKP
1
6
0
0
5
0
0
4
BYTE
0
3
ROW
0
2
ERASE
0
1
Bit 0
EELAT
0
EEPGM
0
RESET:
BULKP — Bulk Erase Protection
0 = EEPROM can be bulk erased.
1 = EEPROM is protected from being bulk or row erased.
Read anytime. Write anytime if EEPGM = 0 and PROTLCK = 0.
BYTE — Byte and Aligned Word Erase
0 = Bulk or row erase is enabled.
1 = One byte or one aligned word erase only.
Read anytime. Write anytime if EEPGM = 0.
ROW — Row or Bulk Erase (when BYTE = 0)
0 = Erase entire EEPROM array.
1 = Erase only one 32-byte row.
Read anytime. Write anytime if EEPGM = 0.
BYTE and ROW have no effect when ERASE = 0
Table 8-2. Erase Selection
BYTE
ROW
Block size
0
0
1
1
0
1
0
1
Bulk erase entire EEPROM array
Row erase 32 bytes
Byte or aligned word erase
Byte or aligned word erase
If BYTE = 1 and test mode is not enabled, only the location specified
by the address written to the programming latches will be erased. The
operation will be a byte or an aligned word erase depending on the
size of written data.
ERASE — Erase Control
0 = EEPROM configuration for programming.
1 = EEPROM configuration for erasure.
Read anytime. Write anytime if EEPGM = 0.
Configures the EEPROM for erasure or programming.
MC68HC912DG128 — Rev 3.0
Technical Data
EEPROM Memory
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