Freescale Semiconductor, Inc.
FLASH 2TS Memory
;**************************************************************
; CALLING EXAMPLE FOR REDUNDANT PROGRAM A ROW (REDPROG)
;**************************************************************
MOV
MOV
MOV
MOV
MOV
MOV
MOV
MOV
#$56,DATA
#’P’,DATA+1
#’R’,DATA+2
#’O’,DATA+3
#’G’,DATA+4
#’R’,DATA+5
#’E’,DATA+6
#’D’,DATA+7
MOV
MOV
#$08,CPUSPD
#$0A,BUMPS
;Load Bus frequency in MHz * 4
;Load max number of programming steps
;before a failure is returned
;Set erase time in uS/24
LDHX
STHX
#100000/24
DERASE
LDHX
#$7808
;Load the last address of the multi-row
;range; (in this case, 2 rows)
;into LADDR
;Load the first address of the
;multi-row range into H:X
;Call through jump table.
STHX
LDHX
LADDR
#$7800
JSR
REDPROG
4.12 Low-Power Modes
The WAIT and STOP instructions put the MCU in low power-
consumption standby modes.
4.12.1 Wait Mode
Putting the MCU into wait mode while the FLASH 2TS is in read mode
does not affect the operation of the FLASH 2TS memory directly, but
there will be no memory activity since the CPU is inactive.
The WAIT instruction should not be executed while performing a
program or erase operation on the FLASH 2TS. When the MCU is put
into wait mode, the charge pump for the FLASH 2TS is disabled so that
either a program or erase operation will not continue. If the memory is in
either program mode (PGM = 1, HVEN = 1) or erase mode (ERASE = 1,
HVEN = 1), then it will remain in that mode during wait. Exit from wait
mode must now be done with a reset rather than an interrupt because if
Advance Information
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MC68HC908RFRK2
FLASH 2TS Memory
MOTOROLA
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