Flash Memory Characteristics
Table 3-7 Flash Timing Parameters
Operating Conditions: VSS = VSSA = 0 V, VDD = VDDA = 3.0–3.6V, TA = –40° to +85°C, CL ≤ 50pF
Characteristic
Program time
Symbol
Min
20
Typ
Max
Unit
us
Figure
–
–
–
–
–
–
Figure 3-4
Figure 3-5
Figure 3-6
Tprog*
Erase time
20
–
–
ms
Terase*
Mass erase time
100
10,000
10
ms
Tme*
ECYC
Endurance1
20,000
30
cycles
years
Data Retention1
DRET
The following parameters should only be used in the Manual Word Programming Mode
PROG/ERASE to NVSTR set
up time
–
–
5
5
–
–
us
us
Figure 3-4,
Figure 3-5,
Figure 3-6
Tnvs*
NVSTR hold time
Figure 3-4,
Figure 3-5
Tnvh*
NVSTR hold time (mass erase)
NVSTR to program set up time
Recovery time
–
–
–
100
10
1
–
–
–
us
us
us
Figure 3-6
Figure 3-4
Tnvh1*
Tpgs*
Trcv*
Figure 3-4,
Figure 3-5,
Figure 3-6
Cumulative program
HV period2
–
3
–
ms
Figure 3-4
Thv
Program hold time3
–
–
–
–
–
–
–
–
–
Figure 3-4
Figure 3-4
Figure 3-4
Tpgh
Tads
Tadh
Address/data set up time3
Address/data hold time3
1. One cycle is equal to an erase program and read.
2. Thv is the cumulative high voltage programming time to the same row before next erase. The same address cannot be
programmed twice before next erase.
3. Parameters are guaranteed by design in smart programming mode and must be one cycle or greater.
*The Flash interface unit provides registers for the control of these parameters.
56F801 Technical Data, Rev. 17
Freescale Semiconductor
21
FREESCALE [ Freescale ]
