ELECTRICAL CHARACTERISTICS
DYNAMIC ELECTRICAL CHARACTERISTICS
Table 5. Dynamic Electrical Characteristics (continued)
Characteristics noted under conditions 4.5 V ≤ VDD ≤ 5.5 V, 6.0 V ≤ VPWR ≤ 27 V, -40°C ≤ TA ≤ 125°C, unless otherwise noted.
Typical values noted reflect the approximate parameter mean at TA = 25°C under nominal conditions, unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
POWER OUTPUT TIMING (CONTINUED)
Over-current Detection Blanking Time (OCLT[1:0])
ms
tOCL0
tOCL1
tOCL2
tOCL3
00
01
10
11
108
7.0
155
10
202
13
0.8
1.2
1.6
0.08
0.15
0.25
Over-current High Detection Blanking Time
CS to CSNS Valid Time(22)
tOCH
1.0
–
10
–
20
10
μs
μs
tCNSVAL
HS1 Switching Delay Time (OSD[2:0])
ms
000
001
010
011
100
101
110
111
tOSD0
tOSD1
tOSD2
tOSD3
tOSD4
tOSD5
tOSD6
tOSD7
–
0
–
55
75
95
110
165
220
275
330
385
150
225
300
375
450
525
190
285
380
475
570
665
HS0 Switching Delay Time (OSD[2:0])
ms
000
001
010
011
100
101
110
111
tOSD0
tOSD1
tOSD2
tOSD3
tOSD4
tOSD5
tOSD6
tOSD7
–
0
–
–
0
–
110
110
220
220
330
330
150
150
300
300
450
450
190
190
380
380
570
570
Watchdog Timeout (WD[1:0])(23)
ms
00
01
10
11
tWDTO0
tWDTO1
tWDTO2
tWDTO3
434
207
620
310
806
403
1750
875
2500
1250
3250
1625
Notes
22. Time necessary for the CSNS to be within ±5% of the targeted value.
23. Watchdog timeout delay measured from the rising edge of WAKE to RST from a sleep-state condition to output turn-ON with the output
driven OFF and FSI floating. The values shown are for WDR setting of [00]. The accuracy of tWDTO is consistent for all configured
watchdog timeouts.
33984
Analog Integrated Circuit Device Data
Freescale Semiconductor
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