ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 4. Static Electrical Characteristics (continued)
Characteristics noted under conditions 4.5 V ≤ VDD ≤ 5.5 V, 6.0 V ≤ VPWR ≤ 27 V, -40°C ≤ TA ≤ 125°C, unless otherwise noted.
Typical values noted reflect the approximate parameter mean at TA = 25°C under nominal conditions, unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
POWER OUTPUT
Output Drain-to-Source ON Resistance (IHS[0:1] = 15 A, TJ = 25°C)
RDS(ON)
mΩ
VPWR = 6.0 V
VPWR = 10 V
VPWR = 13 V
–
–
–
–
–
–
6.0
4.0
4.0
Output Drain-to-Source ON Resistance (IHS[0:1] = 15 A, TJ = 150°C)
RDS(ON)
mΩ
VPWR = 6.0 V
VPWR = 10 V
VPWR = 13 V
–
–
–
–
–
–
10.2
6.8
6.8
Output Source-to-Drain ON Resistance IHS[0:1] = 15 A, TJ = 25°C(10)
RDS(ON)
mΩ
VPWR = -12 V
–
–
8.0
Output Over-current High Detection Levels (9.0 V < VPWR < 16 V)
A
SOCH = 0
SOCH = 1
IOCH0
IOCH1
80
60
100
75
120
90
Over-current Low Detection Levels (SOCL[2:0])
A
000
001
010
011
100
101
110
111
IOCL0
IOCL1
IOCL2
IOCL3
IOCL4
IOCL5
IOCL6
IOCL7
21
18
16
14
12
10
8.0
6.0
25
22.5
20
29
27
24
21
18
15
12
9.0
17.5
15
12.5
10
7.5
Current Sense Ratio (9.0 V < VPWR < 16 V, CSNS < 4.5 V)
–
DICR D2 = 0
DICR D2 = 1
CSR0
CSR1
–
–
1/20500
1/41000
–
–
Current Sense Ratio (CSR0) Accuracy
CSR0_ACC
%
Output Current
5.0 A
-20
-14
-13
-12
-13
-13
–
–
–
–
–
–
20
14
13
12
13
13
10 A
12.5 A
15 A
20 A
25 A
Notes
10. Source-Drain ON Resistance (Reverse Drain-to-Source ON Resistance) with negative polarity VPWR
.
33984
Analog Integrated Circuit Device Data
Freescale Semiconductor
9
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