ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 4. Static Electrical Characteristics (continued)
Characteristics noted under conditions 4.5 V
≤
V
DD
≤
5.5 V, 6.0 V
≤
V
PWR
≤
27 V, -40°C
≤
T
A
≤
125°C, unless otherwise noted.
Typical values noted reflect the approximate parameter mean at T
A
= 25°C under nominal conditions, unless otherwise noted.
Characteristic
POWER OUTPUT
Output Drain-to-Source ON Resistance
(
I
HS[0:1]
= 15 A, T
J
= 25
°
C)
V
PWR
= 6.0 V
V
PWR
= 10 V
V
PWR
= 13 V
Output Drain-to-Source ON Resistance (I
HS[0:1]
= 15 A, T
J
= 150
°
C)
V
PWR
= 6.0 V
V
PWR
= 10 V
V
PWR
= 13 V
Output Source-to-Drain ON Resistance I
HS[0:1]
= 15 A, T
J
= 25
°
C
V
PWR
= -12 V
Output Over-current High Detection Levels (9.0 V < V
PWR
< 16 V)
SOCH = 0
SOCH = 1
Over-current Low Detection Levels (SOCL[2:0])
000
001
010
011
100
101
110
111
Current Sense Ratio (9.0 V < V
PWR
< 16 V, CSNS < 4.5 V)
DICR D2 = 0
DICR D2 = 1
Current Sense Ratio (C
SR0
) Accuracy
Output Current
5.0 A
10 A
12.5 A
15 A
20 A
25 A
- 20
-14
-13
-12
-13
-13
–
–
–
–
–
–
20
14
13
12
13
13
C
SR0
C
SR1
C
SR0_ACC
–
–
1/20500
1/41000
–
–
%
I
OCL0
I
OCL1
I
OCL2
I
OCL3
I
OCL4
I
OCL5
I
OCL6
I
OCL7
21
18
16
14
12
10
8.0
6.0
25
22.5
20
17.5
15
12.5
10
7.5
29
27
24
21
18
15
12
9.0
–
I
OCH0
I
OCH1
80
60
100
75
120
90
A
R
DS(ON)
–
–
8.0
A
R
DS(ON)
–
–
–
–
–
–
10.2
6.8
6.8
mΩ
R
DS(ON)
–
–
–
–
–
–
6.0
4.0
4.0
mΩ
mΩ
Symbol
Min
Typ
Max
Unit
Notes
10. Source-Drain ON Resistance (Reverse Drain-to-Source ON Resistance) with negative polarity V
PWR
.
33984
Analog Integrated Circuit Device Data
Freescale Semiconductor
9