ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 4. Static Electrical Characteristics (continued)
Characteristics noted under conditions of 3.0V
≤
V
DD
≤
5.5V, 8.0V
≤
V
PWR
≤
28V, -40°C
≤
T
C
≤
125°C, unless otherwise
noted. Where applicable, typical values reflect the parameter’s approximate average value with V
PWR
= 13V, T
A
= 25°C.
Characteristic
DIGITAL INTERFACE
Input Logic High-Voltage Thresholds
Input Logic Low-Voltage Thresholds
SCLK, SI, Tri-State SO Input Current
0.0 V to V
DD
CS
Input Current
CS
= V
DD
CS
Pull-Up Current
CS
= 0.0V
Symbol
Min
Typ
Max
Unit
V
IH
V
IL
I
SCLK,
I
SI,
I
SO(TRI)
I
CS
0.7 x V
DD
GND - 0.3
–
–
V
DD
+ 0.3
0.2 x V
DD
V
V
μA
-10
–
10
μA
-10
I
CS
30
V
SO(
HIGH)
V
DD
- 0.8
V
SO(
LOW)
–
C
IN
–
V
INT(
HIGH
)
VDD - 0.5
V
INT(
LOW
)
–
I
WAKE(
PU
)
V
WAKE (
HIGH
)
4.0
V
WAKE
(
LOW
)
–
V
WAKE
(
MAX
)
–
20
–
15
–
10
μA
–
100
V
SO High-State Output Voltage
I
SO(
HIGH)
= -200μA
SO Low-State Output Voltage
I
SO(
HIGH)
= 1.6mA
Input Capacitance on SCLK, SI, Tri-State SO
INT
Internal Pull-Up Current
INT
Voltage
INT
= Open Circuit
INT
Voltage
–
VDD
V
–
–
40
0.4
20
100
pF
μA
V
–
VDD
V
I
INT
= 1.0mA
WAKE
Internal Pull-Up Current
WAKE
Voltage
WAKE
= Open Circuit
WAKE
Voltage
0.2
40
0.4
100
μA
V
4.3
5.3
V
I
WAKE
= 1.0mA
WAKE
Voltage
0.2
0.4
V
Maximum Voltage Applied to
WAKE
Through External Pull-Up
Notes
11. Upper and lower logic threshold voltage levels apply to SI,
CS
, and SCLK.
12. This parameter is guaranteed by design however, is not production tested.
–
40
33975
Analog Integrated Circuit Device Data
Freescale Semiconductor
9