ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 5. Static Electrical Characteristics (continued)
Characteristics noted under conditions 4.75 V ≤ V2 ≤ 5.25 V, 5.5 V ≤ VSUP ≤ 18 V, and -40°C ≤ TA ≤ 125°C. Typical values
noted reflect the approximate parameter mean at TA = 25°C under nominal conditions unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
TRACKING VOLTAGE REGULATOR (V2) (20)
V2 Output Voltage (Capacitance = 10 µF Tantalum at V2)
2.0 mA ≤ IV2 ≤ 200 mA, 5.5 V < VSUP < 27 V
VDD
V2
0.99
200
1.0
—
1.01
—
IV2 Output Current (for Information Only)
Depending on External Ballast Transistor
mA
mA
IV2
V2 Control Drive Current Capability (21)
Worst Case at TJ = 125°C
IV2CTRL
0.0
—
10
V2LOW Flag Threshold
3.75
4.0
4.25
V
V2LTH
LOGIC OUTPUT PIN (MISO) (22)
Low-Level Output Voltage
IOUT = 1.5 mA
VOL
VOH
IHZ
V
V
0.0
VDD-0.9
-2.0
—
—
—
1.0
VDD
2.0
High-Level Output Voltage
IOUT = -250 µA
Tri-Stated MISO Leakage Current
0 V < VMISO < VDD
µA
Notes
20. V2 specification with external capacitor. Stability requirement: capacitance > 42 µF and ESR < 1.3 Ω (tantalum capacitor), external
resistor between base and emitter required. Measurement conditions: ballast transistor MJD32C, capacitance > 10 µF tantalum, 2.2 kΩ
resistor between base and emitter of ballast transistor.
21. The guaranteed V2CTRL current capability is 10 mA. No active current limiting is used so the actual available current may be higher.
22. Push-pull structure with tri-state condition (CS HIGH).
33742
Analog Integrated Circuit Device Data
Freescale Semiconductor
12
FREESCALE [ Freescale ]
