ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 3. STATIC ELECTRICAL CHARACTERISTICS(continued)
Characteristic noted under conditions -40°C to +125 °C, VBAT from 5 V to 28 V, unless otherwise note. Typical values reflect
approximate mean at 25°C, nominal VCC, at time of device characterization.
Characteristics
Symbol
Min
Typ
Max
Unit
High Side Overcurrent Detection(4)
Low Side Overcurrent Detection
IOCHS
IOCLS
11
–
–
–
–
A
8.0
Leakage Current
Output Stage Switched off
–
–
–
–
–
100
2.0
5.0
µA
V
Free-Wheeling Diode Forward Voltage
IOU = 3.0 A
UD
Free-Wheeling Diode Reverse
Recovery Time
tRR
2.0
µs
IFM =1.0 A, di/dt = 4.0 A/µs
Switch-off Temperature
Hysteresis
160
20
–
–
190
30
°C
°C
OUTPUT STATUS FLAG (OPEN DRAIN OUTPUT)
Output High (SF not set)
USF = 5.0 V
–
–
ISF
–
–
10
µA
Output Low (SF set)
ISF = 300 µA
VSF
1.0
V
TIMING
PWM frequency
CCP = 33 nF
f
–
–
10
KHz
Maximum Switching Frequency During
Current Limitation
VBAT = 6....28 V.....CCP = 33 nF
f
–
–
–
–
20
15
KHz
Output ON Delay
IN1.....>OUT1 or IN2.....>OUT2
tDON
µs
Output OFF Delay
IN1.....>OUT1 or IN2.....>OUT2
tDOFF
–
–
–
15
µs
µs
Output Switching Time
CCP = 0 to 33 nF
OUTiH.....OUTiL, OUTiL.....OUTiH,
IOUT = 3.0 A
tr, tf
2.0
5.0
Disable Delay Time
DIi.....OUTi
tDDIS
–
–
–
8.0
8.0
µs
µs
Turn off in Case of Overcurrent or
Overtemperature
4.0
Power On Delay Time (CCP = 33 nF)(5)
–
1.0
5.0
ms
Notes
4. In case of overcurrent, the time when the current is greater than 7.8 A is lower than 30 µs, with a maximum frequency of 1 kHz.
5. This parameter corresponds to the time for CCP to reach its nominal value when VBAT is applied.
33186
Analog Integrated Circuit Device Data
Freescale Semiconductor
7
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