P-CHANNEL
POWER MOSFET
SFP9634
Fig 7. Breakdown Voltage vs. Temperature
Fig 8. On-Resistance vs. Temperature
1.2
1.1
1.0
0.9
0.8
3.0
2.5
2.0
1.5
1.0
0.5
0.0
@ Notes :
1. VGS = -10 V
2. ID = -2.5 A
@ Notes :
1. VGS = 0 V
2. I = -250
D
A
m
-75
-50
-25
0
25
50
75
100
125
150
175
-75
-50
-25
0
25
50
75
100
125
150
175
TJ , Junction Temperature [oC]
TJ , Junction Temperature [oC]
Fig 9. Max. Safe Operating Area
Fig 10. Max. Drain Current vs. Case Temperature
6
Operation in This Area
is Limited by RDS(on)
5
4
3
2
1
0
1
0.1 ms
1 ms
10
10 ms
DC
0
@ Notes :
10
1. T = 25o
C
C
2. T = 150oC
J
3. Single Pulse
-1
10
0
1
2
25
50
75
100
125
150
10
10
10
Tc , Case Temperature [oC]
-VDS , Drain-Source Voltage [V]
Fig 11. Thermal Response
100
D=0.5
@
Notes :
0.2
0.1
1. ZqJC(t)=1.79 oC/W Max.
2. Duty Factor, D=t /t2
1
3. TJM-TC=PDM*ZqJC(t)
0.05
10-1
P.DM
0.02
0.01
t1.
t2.
single pulse
10-2
10-5
10-4
t1
10-3
10-2
10-1
100
101
,
Square Wave Pulse Duration [sec]
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
