P-CHANNEL
POWER MOSFET
SFP9634
Fig 1. Output Characteristics
Fig 2. Transfer Characteristics
V GS
Top :
- 15 V
- 10 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
1
1
10
10
Bottom : - 4.5 V
0
0
150 o
25o
C
10
10
@ Notes :
1. VGS = 0 V
C
2. VDS = -40 V
@ Notes :
1. 250 s Pulse Test
m
3. 250 s Pulse Test
m
- 55 o
C
2. TC = 25o
C
-1
-1
10
10
-1
0
1
2
4
6
8
10
10
10
10
-VGS , Gate-Source Voltage [V]
-VDS , Drain-Source Voltage [V]
Fig 3. On-Resistance vs. Drain Current
Fig 4. Source-Drain Diode Forward Voltage
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1
10
V
GS = -10 V
0
10
150 o
C
@ Notes :
1. VGS = 0 V
25o
C
V
GS = -20 V
2. 250 s Pulse Test
m
@ Note : T = 25o
C
J
-1
0.5
10
0
3
6
9
12
15
18
21
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
-I , Drain Current [A]
-VSD , Source-Drain Voltage [V]
D
Fig 5. Capacitance vs. Drain-Source Voltage
Fig 6. Gate Charge vs. Gate-Source Voltage
1500
1000
500
0
C
iss= Cgs+ Cgd (Cds= shorted)
Coss= Cds+ C
gd
V
DS = -50 V
DS = -125 V
DS = -200 V
10
Crss= C
V
gd
V
C iss
C oss
5
@ Notes :
1. VGS = 0 V
2. f = 1 MHz
C rss
@ Notes : I =-5.0 A
D
0
0
1
0
5
10
15
20
25
30
10
10
Q , Total Gate Charge [nC]
-VDS , Drain-Source Voltage [V]
G
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
