P-CHANNEL
POWER MOSFET
SFF9240
Fig 7. Breakdown Voltage vs. Temperature
Fig 8. On-Resistance vs. Temperature
1.2
1.1
1.0
0.9
0.8
3.0
2.5
2.0
1.5
1.0
0.5
0.0
@ Notes :
1. VGS = 0 V
@ Notes :
1. VGS = -10 V
2. I = -250
A
µ
2. I = -5.5 A
D
D
-75 -50 -25
0
25
50
75
100 125 150 175
o
-75 -50 -25
0
25
50
75
100 125 150 175
o
T , Junction Temperature [C]
T , Junction Temperature [C]
J
J
Fig 9. Max. Safe Operating Area
Fig 10. Max. Drain Current vs. Case Temperature
Operation in This Area
is Limited by R DS(on)
2
10
8
6
4
2
0
0.1 ms
1 ms
1
10
10 ms
DC
@ Notes :
1. T = 25 oC
0
10
C
2. T = 150 oC
J
3. Single Pulse
-1
10
0
1
2
25
50
75
100
125
150
10
10
10
o
T , Case Temperature [C]
-V , Drain-Source Voltage [V]
c
DS
Fig 11. Thermal Response
100
10-1
10-2
D=0.5
@ Notes :
1. Z JC(t)=2.08 oC/W Max.
0.2
0.1
θ
2. Duty Factor, D=t1/t2
3. TJM-TC=PDM*Zθ JC(t)
0.05
P.DM
0.02
0.01
t1.
t2.
single pulse
10-5
10-4
10-3
10-2
10-1
100
101
t1 , Square Wave Pulse Duration [sec]
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
